13nm窄带Si／Mo／C多层膜反射镜  

Narrow-band Si/Mo/C multilayer mirrors working at 13nm

作　　者：易强[1] 黄秋实[2] 王香梅[2] 杨洋[2] 张众[2] 王占山[2] 徐荣昆[1] 彭太平[1] 周洪军[3] 霍同林[3] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [2]同济大学物理科学与工程学院,精密光学光程研究所,先进微结构材料教育部重点实验室,上海200092 [3]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《强激光与粒子束》2016年第12期14-19,共6页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(11443007,11505129,U1430131);国家重大科学仪器设备开发项目(2012YQ13012505,2012YQ24026402);上海市浦江人才计划(15PJ1408000)

摘　　要：基于多层膜准单色覆盖50-1500eV能谱的多能点发射光谱测量系统可获得“聚龙一号”装置Z-pinch等离子体X射线源的能谱结构和总能量等信息。考虑装置的条件,在13nm处的多层膜需要工作在掠入射角60°。常规的Mo/Si多层膜尽管反射率最高,但其带宽较大,不能满足多层膜准单色的要求。因此提出将Mo和C共同作为多层膜的吸收层材料与Si组成Si/Mo/C多层膜,可使反射率降低较小而带宽明显减小。采用磁控溅射方法制备了Si/Mo/C多层膜,其掠入射X射线反射测量表面多层膜的结构清晰完整,同步辐射工作条件下反射率测量,得到Si/Mo/C多层膜在13nm处和掠入射角60°时的反射率为56.5%,带宽为0.49nm（3.7eV）。A multi-energy-point emission spectrum measurement system can be implemented on primary test stand （PTS） facility based on multilayer covering from 50 eV to 1500 eV quasi monochromatically. The information of spectrum structure and total energy of this Z-pinch plasma X-ray radiation source can be obtained from this system. The multilayer working at 13 nm is required to operate under a grazing incidence angle of 60° given the facility condition. The highest reflectivity can be achieved by the conventional Mo/Si multilayer, but it will display a large bandwidth, which cannot satisfy the quasi-monochromatic require- ment for the multilayer. This paper proposes that taking Mo and C together as the absorbing materials to combine with Si to form Si/Mo/C multilayer, which can significantly reduce the bandwidth with a slight decrease of the reflectivity. This kind of Si/Mo/ C multilayer was fabricated by direct current magnetron sputtering technique. The grazing incidence X-ray reflectivity （GIXR） has shown the multilayer with a clear and complete structure. The EUV reflectivity measurement at the synchrotron radiation light source has demonstrated this Si/Mo/C multilayer with a reflectivity of 56.5 % and a bandwidth of 0. 49 nm （3.7 eV）.

关 键 词：多层膜 MO/SI Si/Mo/C Z-PINCH 光谱诊断 反射率 带宽 

分 类 号：O434.2[机械工程—光学工程]