基于基片集成波导技术的毫米波引线键合结构  

A Millimeter Wave Wire Bonding Structure Based on Substrate Integrated Waveguide Technology

作　　者：张慧[1] 陈鹏[1] 

机构地区：[1]东南大学信息科学与工程学院,毫米波国家重点实验室,南京210096

出　　处：《激光杂志》2016年第12期9-12,共4页Laser Journal

基　　金：国家重点研发计划(2016YFB0101001)

摘　　要：当前微波毫米波芯片的引线键合主要是在芯片焊盘和微带线之间实施,当工作频率达到毫米波频段,引线键合的性能对键合线属性及微带线加工精度的敏感度均越来越高,键合操作中键合线长度的差异或微带线加工的误差都可能导致键合性能的快速恶化。提出了一种基于基片集成波导(Substrate Integrated Waveguide,SIW)技术的毫米波引线键合结构,该结构直接使用SIW与芯片焊盘或其他电路进行键合,对比现有微带键合方案,使用提出的基于SIW的键合方案,可以显著降低对结构加工精度的敏感度,同时减少了对介质基片的限制等。设计了无源SIW键合结构,仿真和测试结果表明,基于SIW的键合结构拥有良好的键合性能,相比微带键合结构,降低了传输损耗,降低了对结构尺寸的灵敏度,改善了键合性能。Current microwave and millimeter wire bonding is mainly implemented between the chip pad and the microstrip line. When the operating frequency is up to millimeter wave, the performance of wire bonding shows a high sensitivity to the properties of the bonding wire and the microstrip line precision, any small errors on length of bonding wire or mierostrip line may lead to rapid deterioration of the bonding performance. In this paper, a novel wire bonding structure based on Substrate Integrated Waveguide （SIW） is proposed, which is used to make wire bonding between SIW and millimeter wave chips or other circuit elements. Compared to the conventional microstrip wire bonding scheme, the proposed solution can reduce the sensitivity to the PCB production accuracy and the limitations on the sub- strate. The passive SIW bonding structures are designed and fabricated. The simulated and measured results show that the SIW wire bonding structure has good performance, compared to the microstrip wire bonding structure, it reduces the transmission loss and improves the wire bonding performance.

关 键 词：键合 基片集成波导 SIW 毫米波芯片 

分 类 号：TN249[电子电信—物理电子学]