磁控溅射铜薄膜微观结构对其电爆性能的影响  

Effects of microstructureof Cu thin films deposited by magnetron sputtering on electro-explosive performance

作　　者：胡云钦 邱林俊 代波[1] 魏贤华[1] 任勇[1] 葛妮娜 龙震[1] 

机构地区：[1]西南科技大学四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地,四川绵阳621010

出　　处：《功能材料》2016年第12期12152-12156,共5页Journal of Functional Materials

基　　金：四川省非金属复合与功能材料重点实验室开放基金资助项目(14zxpy04);四川省非金属复合有功能材料重点实验室科研创新团队建设基金资助项目(14tdfk07)

摘　　要：采用直流磁控溅射法在不同溅射功率和工作气压条件下沉积Cu薄膜,对其进行X射线衍射、原子力显微镜、电阻率测试,分析了工艺参数对Cu薄膜的沉积速率、微观结构和电阻率的影响。通过紫外光刻技术将Cu薄膜制成桥箔,采用电爆测试平台获得Cu桥箔的电爆参数,研究了Cu薄膜的晶粒尺寸、择优取向对其电爆性能的影响。结果表明:随溅射功率的增大,Cu薄膜的沉积速率增加、晶粒尺寸增大、Cu(111)晶面择优取向特性变差,且电阻率降低;随溅射工作气压增大,Cu薄膜的沉积速率降低、晶粒尺寸减小、Cu(111)晶面择优取向越明显,且电阻率增加。对于相同桥区参数的Cu桥箔,晶粒尺寸越小,其爆发时刻就越早;Cu(111)晶面择优取向越明显,其爆发电流和峰值功率就会越大。Copper （Cu）thin films were deposited by DC magnetron sputtering method.The structure,morphol-ogy and resistivity of the deposited Cu films have been examined with respect to the sputtering power and sput-tering pressure.The exploding bridge foils were fabricated with photolithography,and their electro-explosive performances were studied by the test circuit.Both increasing sputtering power and decreasing sputtering pres-sure result in quicker deposition rate,larger grain size and lower resistivity of the deposited Cu films.Besides, the samples have higher crystalline orientation along the （1 1 1 ）direction with decreasing sputtering power and increasing sputtering pressure.Moreover,the Cu bridge foils with larger grain size have an earlier burst mo-ment.Meanwhile,the bridge foils have higher peak current and peak power with higher Cu （111）preferred ori-entation.

关 键 词：Cu薄膜 磁控溅射 桥箔 电爆性能 

分 类 号：O484[理学—固体物理] TJ450.4[理学—物理]