室温纳米压印制备中的共性关键工艺问题  

Common and Critical Issues on the Process of Room Temperature Nanoimprint Lithography

作　　者：朱振东[1,2] 施玉书[1] 李伟[1] 高思田[1] 李适[1] 李琪[1] 张立辉[2] 李群庆[2] 范守善[2] 

机构地区：[1]中国计量科学研究院,北京100029 [2]清华大学清华-富士康纳米科技研究中心,北京100084

出　　处：《微纳电子技术》2017年第1期43-47,70,共6页Micronanoelectronic Technology

基　　金：国家质量基础的共性技术研究与应用资助项目(2016YFF0200602);国家纳米科技重点研发计划资助项目(2016YFA0200901)

摘　　要：纳米压印光刻技术具有低成本、高效率、大面积、高分辨、多尺度、良好的工艺兼容性等特点,可用于亚波长光电子器件的研究。提出了硅水合物(HSQ)/聚丙烯酸甲酯(PMMA)双层胶室温纳米压印工艺方法,研究并解决了有关压印光刻胶剩余底膜和纳米图形保真性刻蚀转移的两个关键工艺技术问题。以制备特定需求的石英纳米光栅器件为目标,经过工艺优化,成功地实现了周期200 nm、占空比0.5、深宽比5∶1、栅线侧壁垂直且粗糙度小于3 nm的高分辨率亚波长光栅的制备。所提出的双层胶刻蚀方法,有望拓展到纳米标准物质和芯片级光学频率梳器件等对侧壁陡直和粗糙度有严格要求的应用领域。Emerging nanoimprint lithography（NIL）can be extensively utilized to fabricate many high resolution nanostructures and nanodevices for nanophotnics and nanoelectronics with cost-efficiency,multiscale and smart compatibility.A novel method was proposed to improve the reliability of a bilayer photoresist process for room temperature nanoimprint lithography（RT-NIL）,in which a film of hydrogen silsesquioxane（HSQ）coated on a layer of polymethyl methacrylate（PMMA）was used to solve the critical and common issues of the process to reduce the residual of photoresist in the imprinted channel,and to promote the fidelity of the nanopatterns transferring.The experimental results demonstrate that quartz nanogratings can be achieved.The pitch,duty ratio and aspect ratio of the fabricated nanogratings are 200 nm,0.5 and 5∶1,respectively.The nanostructure also shows that its roughness is less than3 nm,and the angle of the lateral wall of the nanogratings is near to right angle.Therefore,the proposed method of the bilayer resist with high performance and good stability can be widely used to fabricate some special nanodevices,for example,the on-chip optical frequency combs with vertical and very smooth lateral walls.

关 键 词：室温纳米压印 光刻胶剩余 图形转移技术 纳米刻蚀 亚波长光栅 

分 类 号：O482.5[理学—固体物理] O488[理学—物理]