重离子辐照SiO_2/Si结构变温光致发光谱研究  

The Study of Temperature-Dependent Photoluminescence of the SiO_2/Si Structures after Swift Heavy Ion Radiation

作　　者：马瑶[1] 龚敏[1] 刘鑫[1] 胥鹏飞[1] 林巍[1] 冷宏强 

机构地区：[1]四川大学物理科学与技术学院微电子技术四川省重点实验室,成都610064

出　　处：《光散射学报》2016年第4期369-373,共5页The Journal of Light Scattering

基　　金：国家自然科学基金项目(61176096)

摘　　要：本文研究了重离子辐照前后SiO_2/Si结构光学性质的变化。实验选择初始能量为414 MeV,不同辐照总剂量的Sn离子,在室温下辐照氧化层厚度为36nm和90nm的SiO_2/Si结构。并在不同测试温度下获得了辐照前后SiO_2/Si结构的光致发光谱(PL)谱。在相同的测试温度下,随着辐照总剂量的改变,峰位发生了移动,峰的强度也发生了改变;在相同的辐照总剂量下,随着测试温度的改变,峰位发生移动。由于受束缚激子发光的影响,在测试温度为80K时出现了一个新的光致发光峰。In this work,the study of optical property of the SiO2/Si structures were performed before and after swift heavy ion radiation. The Sn ions with the energy of 414 MeV and different fluence were chosen to irradiate the SiO2/Si structure with oxide thickness of 36 nm and 90 nm at room temperature. The photoluminescence （PL） spectrum of the SiO2/Si structure were obtained at different test temperature. With the changing of the fluence,the PL peak moved and the intensity of the PL band changed at the same test temperature; at the same fluence,the PL peak moved with the changing of the test temperature. A new PL band were obtained at 80 K due to the Light emission of bound exciton.

关 键 词：重离子 SiO2/Si结构 变温光致发光 

分 类 号：O433[机械工程—光学工程]