芯片级集成射频垂直互连技术  

RF Vertical Interconnection for Chip-Scale Integrated

作　　者：王辉[1] 向伟玮[1] 陆吟泉[1] 刘志辉[1] WANG Hui XIANG Wei-wei LU Yin-quan LIU Zhi-hui(The 29th Research Institute of CETC, Chengdu 610036, China)

机构地区：[1]中国电子科技集团公司第二十九研究所,四川成都610036

出　　处：《电子工艺技术》2016年第6期320-322,326,共4页Electronics Process Technology

摘　　要：随着电子装备向小型化、轻量化和多功能化方向发展,其内部电子部件/组件集成密度要求不断提升,传统的2D集成密度已接近极限,2.5D/3D集成必将成为新一代电子部件/组件的主流形态。射频垂直互连技术是2.5D/3D集成射频系统的关键技术之一。对芯片级集成射频垂直互连技术的发展动态及应用前景进行了综述。With the development of the electronic products, the 2D integrated has been not fulfi lled the application. Due to the miniaturized size, lower weight and multifunctional, 2.5D/3D integrated become a trend and necessity. RF vertical interconnection is one of key techniques for 2.5D/3D RF integration. The development of the RF vertical interconnection for chip-scale integrated was summarized.

关 键 词：2.5D/3D集成 芯片级集成 射频互连 垂直互连 

分 类 号：TN45[电子电信—微电子学与固体电子学]