硅基微纳结构薄膜中全向光吸收效应  

Omnidirectional Optical Absorption Effect in a Microstructure Silicon Thin Film

作　　者：张晓彤[1] 路海[1] 张现周[1] 沈克胜[1] 张坤[1] 李丽君[1] 黄蒙[1] 

机构地区：[1]河南师范大学物理与材料科学学院,河南新乡453007

出　　处：《河南师范大学学报（自然科学版）》2016年第6期62-66,共5页Journal of Henan Normal University(Natural Science Edition)

基　　金：国家自然科学基金(11404102);河南省重点科技攻关计划项目(152102210079);河南省教育厅科学技术研究重点项目(14A140002);先进微结构材料教育部重点实验室开放课题(5201029160008)

摘　　要：研究了一种由硅基光子晶体与金属复合微纳结构薄膜中的全向光吸收效应。与完整的硅/金属复合薄膜进行比较研究发现,在硅薄膜厚度相同的条件下硅基微纳结构薄膜能够使吸光度提高近70%。此外,结果显示这种光吸收增强效应对入射角度的变化不敏感。在以0°~60°角度入射的情况下,硅微纳结构薄膜都能够具备接近100%的光吸收。通过对能带以及场构型分析可以发现,这种现象产生的原因归结于金属平板与截断光子晶体中特殊的边界陷光效应和六角晶格的全向带隙。Omnidirectional optical absorption of a microstructure film composed of a metallic film combined with a silicon-based photonic crystal is investigated theoretically.Compared with the intact silicon/metal composite films,the siliconbased microstructure films can increase the absorbance by nearly 70% under the same silicon film thickness.In addition,the results show that this optical absorption enhancement effect is insensitive to changes in the incident angle.In the case of 0°-60°angle of the incident,the silicon microstructure film can have nearly 100% of the light absorption.By analyzing the corresponding bandgap and field distribution,it is found that the reason of this phenomenon is attributed to the special boundary trapping effect and the omnidirectional bandgap of hexagonal lattice.

关 键 词：硅薄膜 微纳结构 陷光效应 光子晶体 

分 类 号：O439[机械工程—光学工程]