大功率高效率2μm锑化镓基量子阱激光器（英文）  

High-power,high-efficient GaSb-based quantum well laser diodes emitting at 2 μm

作　　者：廖永平[1,2] 张宇[1,2] 杨成奥 黄书山 柴小力 王国伟[1,2] 徐应强[1,2] 倪海桥[1,2] 牛智川[1,2] 

机构地区：[1]中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083 [2]中国科学技术大学量子信息与量子物理协同创新中心,安徽合肥230026

出　　处：《红外与毫米波学报》2016年第6期672-675,共4页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Basic Research Program of China(2014 CB643903,2013 CB932904);National Natural Science Foundation of China(61435012,61274125,and 61274013);National Special funds for the Development of Major Research Equipment and Instruments,China(2012YQ140005);Strategic Priority Research Program(B)of Chinese Academy of Sciences(XDB01010200)

摘　　要：通过MBE外延系统生长了2μmGaSb基AlGaAsSb/InGaSbI型量子阱激光器,并制备了宽面条形波导激光器件,在20℃工作温度下,器件最大连续激射功率达到1.058W,当注入电流为0.5A时,峰值波长为1.977μm,最大能量转换效率为20.2%,在脉冲频率为1000Hz,占空比为5%的脉冲工作模式下,最大激射功率为2.278W.GaSb-based A1GaAsSb/InGaSb type-I quantum-wells （QW） 2 μm laser diodes （LDs） have been grown by MBE system. Stripe-type waveguide LDs with facets uncoated were fabricated and characterized. For single LD device, the maximum output power was 1. 058 W under continuous wave （CW） operation at working temperature of 20℃. The maximum wall plug efficiency （WPE） was 20.2% and peak wavelength was 1. 977μm with injection current 0.5 A. The output power under pulse mode of 1000 Hz in 5% duty cycles was 2. 278 W.

关 键 词：大功率 激光二极管 中红外 量子阱 

分 类 号：O43[机械工程—光学工程]