生长于Pt/Ti/SiO_2/Si衬底的Zn_xNi_((1-x))Mn_2O_4薄膜的结构与光学性质（英文）  

The structural and optical properties of Zn_xNi_((1-x))Mn_2O_4 films grown on Pt/Ti/SiO_2/Si substrate

作　　者：王万胜[1,2] 侯云[1] 张增辉[3] 周炜[1] 高艳卿[1] 吴敬[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083 [2]中国科学院大学,北京100049 [3]上海理工大学材料科学与工程学院,上海200093

出　　处：《红外与毫米波学报》2016年第6期676-680,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61275111,11304336);Shanghai Project(15 ZR1445700)

摘　　要：采用化学溶液法在Pt/Ti/SiO_2/Si衬底上生长了Zn_xNi_((1-x))Mn_2O_4(ZNMO,x=0,0.05,0.1,0.15,0.2,0.25)尖晶石氧化物薄膜。X射线衍射(XRD)与场发射扫描电子显微镜(FESEM)分析结果表明,Zn的掺杂浓度对ZNMO薄膜的结晶性和微结构有明显影响。用椭圆偏振光谱仪测量分析了ZNMO薄膜在300-1 100 nm波段的光学常数,并讨论了Zn掺杂对折射率n和消光系数k的影响。在薄膜的拉曼光谱中观测到两个峰A1 g与F2g,A1 g模式的相对峰位随着Zn的掺杂浓度x的增大而减小。由于晶格应变与晶格失配,拉曼峰峰位随Zn掺杂浓度的变化而轻微移动。The spinel oxide ZnxNi1-xMnz 04 （ZNMO, x = 0, 0.05, 0.1,0.15, 0.2, 0.25） films have been grown on Pt/Ti/SiO2/Si substrate by chemical solution deposition （CSD） method. The crystallization and microstructural features of ZNMO films are studied by x-ray diffraction （XRD） and field-emission scanning electron microscopy （FESEM） analysis, respectively. The results show that the structural property of ZNMO films is affected by Zn concentration. The optical constants of ZNMO films have been analyzed by spectroscopic ellipsometry measurements in the wavelength range of 300-1 100 nm. The changes of the refractive index n and extinction coefficient k caused by Zn substituting are discussed. The A1g and F2g modes have been observed in Raman spectra. The relative intensity of the A1g mode decreases with increasing Zn concentration. The Raman peak positions shift slightly with Zn concentration x, which might result from lattice strain and lattice mismatch.

关 键 词：尖晶石氧化物 结构特性 光学常数 拉曼光谱 

分 类 号：O484.1[理学—固体物理] O484.41[理学—物理]