C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition  

作　　者：赵颖 许晟瑞 林志宇 张进成 姜腾 付梦笛 朱家铎 陆琴 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University

出　　处：《Chinese Physics Letters》2016年第12期138-141,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61204006,61574108,61334002,61474086 and 51302306

摘　　要：C-implantation N-polar CaN films are grown on c-plane sapphire substrates by metal organic chemical vapor deposition. C-implantation induces a large number of defects and causes disorder of the lattice structure in the N-polar GaN film. Raman measurements performed on the N-polar GaN film before C-implantation after C-implantation and subsequent annealing at 1050℃ for 5 rain indicate that after annealing the disordered GaN lattice is almost recovered. High resolution x-ray diffraction shows that after implantation there is an obvious increase of screw-dislocation densities, and the densities of edge dislocation show slight change. Carbon implantation can induce deep acceptors in GaN, thus the background carriers induced by the high oxygen incorporation in the N-polar GaN film will be partially compensated for, resulting in 25 times the resistivity, which is demonstrated by the temperature-dependent Hall-effect measurement.C-implantation N-polar CaN films are grown on c-plane sapphire substrates by metal organic chemical vapor deposition. C-implantation induces a large number of defects and causes disorder of the lattice structure in the N-polar GaN film. Raman measurements performed on the N-polar GaN film before C-implantation after C-implantation and subsequent annealing at 1050℃ for 5 rain indicate that after annealing the disordered GaN lattice is almost recovered. High resolution x-ray diffraction shows that after implantation there is an obvious increase of screw-dislocation densities, and the densities of edge dislocation show slight change. Carbon implantation can induce deep acceptors in GaN, thus the background carriers induced by the high oxygen incorporation in the N-polar GaN film will be partially compensated for, resulting in 25 times the resistivity, which is demonstrated by the temperature-dependent Hall-effect measurement.

关 键 词：GAN in AS by of 

分 类 号：TB383.2[一般工业技术—材料科学与工程]