光抽运太赫兹探测技术研究ZnSe的光致载流子动力学特性  

Photocarrier dynamics in zinc selenide studied with optical-pump terahertz-probe spectroscopy

作　　者：李高芳[1,2] 马国宏[3] 马红[4] 初凤红[1] 崔昊杨[1] 刘伟景[1] 宋小军[1] 江友华[1] 黄志明[2] 褚君浩[2] Li Gao-Fang Ma Guo-Hong Ma Hong Chu Feng-Hong Cui Hao-Yang Liu Wei-Jing Song Xiao-Jun Jiang You-Hua Huang Zhi-Ming Chu Jun-Hao(College of Electronic and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China Department of Physics, Shanghai University, Shanghai 200444, China College of Physics and Electronics, Shandong Normal University, Jinan 250014, China)

机构地区：[1]上海电力学院电子与信息工程学院,上海200090 [2]中国科学院上海技术物理研究所中国科学院红外物理国家重点实验室,上海200083 [3]上海大学物理系,上海200444 [4]山东师范大学物理与电子科学学院,济南250014

出　　处：《物理学报》2016年第24期163-169,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11404207;11674213);上海市自然科学基金(批准号:14ZR1417500);上海市科委地方院校能力建设项目(批准号:15110500900;14110500900);上海市教委科研创新项目(批准号:15ZZ086);上海市教委高校青年教师培养资助项目(批准号:ZZsdl15106);上海电力学院人才引进基金(批准号:K2014-028)资助的课题~~

摘　　要：利用光抽运-太赫兹探测技术,研究了ZnSe的载流子弛豫过程和太赫兹波段电导率的时间演化过程.在中心波长为400 nm的抽运光作用下,ZnSe的载流子弛豫过程用双指数函数进行了很好的拟合,其快的载流子弛豫时间和慢的载流子弛豫时间均随抽运光密度的增加而增大.快的载流子弛豫时间随抽运光密度的增加而增大与样品中的缺陷有关,随着激发光密度的增加,激发的光生载流子浓度增大,缺陷逐渐被光生载流子填满,致使快的载流子弛豫时间增大;慢的载流子弛豫时间随着抽运光密度增加而增大主要和带填充有关.不同抽运光延迟时间下ZnSe在太赫兹波段的瞬态电导率用Drude-Smith模型进行了很好的拟合.对ZnSe光致载流子动力学特性的研究为高速光电器件的设计和制造提供了重要的实验依据.Optical pump-terahertz（THz） probe spectroscopy is employed to investigate the photo-excited carrier relaxation process and the evolution of terahertz conductivity in Zn Se.With the pump pulse at a wavelength of 400 nm,the carrier relaxation process can be well fitted to a biexponential function.We find that the recombination process in Zn Se occurs through two components,one is the fast carrier recombination process,and the other is the slow recombination process.The fast carrier relaxation time constant is in a range from a few tens of picoseconds to hundreds of picoseconds,and slow carrier relaxation time constant ranges from one to several nanoseconds.We find that both the fast and the slow carrier relaxation time constant increase with the power density of pump beam increasing,which is related to the density of defects in the sample.Upon increasing the excitation power density,the defects are filled by the increased photo-excited carriers,which leads to an increase in the fast carrier relaxation time.While,the slow carrier relaxation time increasing with pump flux can be attributed to the filling of surface state.We also present the THz complex conductivity spectra of Zn Se at different delay times with a pump flux of 240 μJ/cm^2.It is shown that the real part of the conductivity decreases with increasing the pump-probe delay time.The real part of the conductivity is positive and increases with frequency in each of the selective three delay times（2,20,and 100 ps）,while the imaginary part is negative and decreases with frequency.The transient conductivity spectra at terahertz frequency in different delay times are fitted with Drude-Smith model.According to the fitting results from Drude-Smith model,with the pump-probe delay time increasing,the average collision time τ and the value of c_1 decrease.Generally,a higher carrier density leads to a more frequent carrier-carrier collision,which means that the collision time should decrease with carrier density increasing.The abnormal carrier density depende

关 键 词：光抽运-太赫兹探测 光密度 光生载流子 瞬态电导率 

分 类 号：O472[理学—半导体物理] O441.4[理学—物理]