籽晶层辅助的高性能VO_2薄膜的低温制备  

Low-Temperature Preparation of High-Performance VO_2 Film by Seed Layer

作　　者：万冬云[1] 李应成[1] 郭贝贝[1] 丁卓翰 罗宏杰[1] 高彦峰[1] WAN Dongyun LI Yingeheng GUO Beibei DING Zhuohan LUO Hongjie GAO Yanfeng(School of Materials Science and Engineering, Shanghai University, Shanghai 200444, Chin)

机构地区：[1]上海大学材料科学与工程学院,上海200444

出　　处：《硅酸盐学报》2017年第1期157-165,共9页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51325203);国家自然科学基金大科学装置联合基金(U1632108)项目

摘　　要：采用磁控溅射法,以VO_2为溅射靶材在硅和石英基底上制备出纯VO_2晶相(B相和M相)薄膜。借助衬底上籽晶层的辅助,将VO_2薄膜沉积过程中同时进行的成核与生长过程分离成2个独立的阶段,通过籽晶层辅助生长可有效地降低了VO_2薄膜的制备温度,在低至350℃仍可制备出热敏性能较好的VO_2(B相)薄膜,并且在325℃制备了具有一定结晶度的VO_2薄膜;进一步延长了低温籽晶层辅助的VO_2薄膜的退火时间,薄膜逐渐向M相转变,可期望实现智能窗和光控开关器件中的良好应用。Pure VO2 thin films （B phase and M phase） were deposited on silicon and glass substrates by a RF-magnetron sputtering method with VO2 as a sputtering target. With the assistance of the seed layer on the substrate, the combined nucleation growth film deposition is divided into two individual steps, i.e., nucleation and grain growth.The high thermal sensitive VO2（B） phase films are obtained when the annealing temperature effectively decreases to 350 ℃. The crystallized VO2 thin films was prepared even at the annealing temperature of 325 ℃. The seed-layer assisted VO2 film undergoes B phase to M phase with the prolonged annealing time, which could allow its applications in thermo-opto-electro sensing devices.

关 键 词：磁控溅射 氧化钒薄膜 两步溅射工艺 籽晶层 低温 

分 类 号：TQ174[化学工程—陶瓷工业]