4H-SiC MESFET特性对比及仿真  

The characteristic comparison and simulation of 4H-SiC MESFET

作　　者：侯斌 邢鼎 张战国 臧继超 马磊 Hou Bin Xing Ding Zhang Zhanguo Zang Jichao Ma Lei(The 771 Institute of the Ninth Research Institute of Aerospace Science and Technology Corporation, Xi＇an 710000, China)

机构地区：[1]航天科技集团九院七七一研究所,陕西西安710000

出　　处：《电子技术应用》2017年第1期13-15,19,共4页Application of Electronic Technique

摘　　要：通过对双凹栅结构和阶梯栅结构4H-SiC MESFET的直流特性对比,得出阶梯栅结构的直流特性优于双凹栅结构。对阶梯栅结构进行极限化处理后,引出了坡形栅4H-SiC MESFET的结构及其特征参数EP_(CG),通过仿真对比了坡形栅4H-SiC MESFET结构EP_(CG)分别为1/4栅、1/2栅、3/4栅和全栅时的直流特性。结果表明,当EP_(CG)为1/2栅时,最大饱和漏电流取得最大值,在V_G=0 V、V_(DS)=40 V的条件下达到了545 mA;当EPCG为1/4栅、3/4栅和全栅时,最大饱和漏电流均不如EP_(CG)为1/2栅时取得的最大值。Comparing the DC characteristic of double recessed gate structure and stepped gate structure of 4H-SiC MESFET, the DC characteristic of double gate structure are better than the step gate structure. The structure and characteristic parameter of EPcc. of slope gate 4H-SiC MESFET bring forward through limiting the step gate structure. Simulating the DC characteristic of slope gate 4H-SiC MESFET when the gate proportion is 1/4,1/2,3/4 and all gate,the result shows that the saturated maximum leakage cur- rent is obtained when the gate proportion is 1/2. The maximum leakage current achieves 545 mA in condition of VG=0 V, Vm=40 V. The maximum saturated leakage which the gate proportion is 1/2 is larger than gate proportion is 1/4,3/4 and all gate.

关 键 词：仿真 4H—SiC MESFET 阶梯栅 坡形栅 

分 类 号：TN386.2[电子电信—物理电子学]