基于CH_3NH_3Pbl_3单晶的Ta_2O_5顶栅双极性场效应晶体管（英文）  

CH_3NH_3Pbl_3 Single Crystal-Based Ambipolar Field-Effect Transistor with Ta_2O_5 as the Top Gate Dielectric

作　　者：吕乾睿 李晶[1] 廉志鹏[1] 赵昊岩[1] 董桂芳[1] 李强[1] 王立铎[1] 严清峰[1] 

机构地区：[1]清华大学化学系,北京100084

出　　处：《物理化学学报》2017年第1期249-254,共6页Acta Physico-Chimica Sinica

基　　金：supported by the National Natural Science Foundation of China(51173097,91333109);National Key Basic Research Program of China(2013CB632900);Tsinghua University Initiative Scientific Research Program,China(20131089202,20161080165);Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China(KF201516)~~

摘　　要：具有无机-有机杂化钙钛矿结构的CH_3NH_3Pbl_3通常偏向于显示n型半导体特性,本文以五氧化二钽(Ta_2O_5)作为绝缘层,制备了基于钙钛矿CH_3NH_3Pbl_3单晶的顶栅结构场效应晶体管,暗态下更明显地观察到了CH_3NH_3Pbl_3所具有的p型场效应特性,空穴场效应迁移率达到8.7×10^(-5)cm^2·V^(-1)·s^(-1),此暗态空穴迁移率比原有报道的基于CH_3NH_3Pbl_3多晶薄膜的SiO_2底栅场效应晶体管提高了一个数量级。此外,光照对CH_3NH_3Pbl_3单晶场效应晶体管的性能有强烈影响。与底栅结构CH_3NH_3Pbl_3多晶场效应晶体管不同,即使有栅极和绝缘层的遮挡,5.00 mW·cm^(-2)的光照仍可使CH_3NH_3Pbl_3单晶场效应晶体管的空穴电流提高一个数量级(V_(GS)(栅源电压)=V_(DS)(漏源电压)=20 V),光响应度达到2.5 A·W^(-1)。本文工作实现了对CH_3NH_3Pbl_3场效应晶体管载流子传输的选择性调控,表明在没有外部因素的参与下,通过合适的器件设计,CH_3NH_3Pbl_3同样具有制备成双极性晶体管的潜力。Organic-inorganic hybrid perovskite methylammonium lead iodide （CH3NH3Pbl3） generally tends to show n-type semiconductor properties, in this work, a field-effect transistor （FET） device based on a CH3NH3Pbl3 single crystal with tantalum pentoxide （Ta2O5） as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer charactedstics in the dark was 8.7 × 10^-5cm^2·V^-1·s^-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO2 as the bottom gate dielectric. In addition, the effect of light illumination on the CH3NH3Pbl3 single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH3NH3Pbl3 single crystal. Different from a CH3NH3Pbl3 polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm^-2 caused the hole current to increase by one order of magnitude compared with that in the dark （VGS （gate-source voltage） = VDS （drain-source voltage） = 20 V） and the photoresponsivity reached 2.5 A·W^-1. The introduction of Ta2O5 as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that CH3NH3Pbl3 also has potential for use i n the absence of external factors, by appropriate device design n ambipolar transistors.

关 键 词：钙钛矿 五氧化二钽 场效应 迁移率 光照 

分 类 号：TN386[电子电信—物理电子学]