一种宽温范围高稳定CMOS带隙基准源  被引量:1

A Wide Temperature Range High Stability CMOS Bandgap Reference

在线阅读下载全文

作  者:冯春燕[1] 翟江辉[2] 李海鸥[2] 郭建[1] 杨年炯[3] 李琦[4] FENG Chunyan ZHAI Jianghui LI Haiou GUO Jian YANG Nianjiong LI Qi(School of Inform. and Commun. Engineer. , Guilin Univ. of Elec. Technol. , C-uilin, Guangxi 541004, P. R. China Guangxi Key Lab. of Precision Naviga. Technol. and Applk. , Guilin Univ. of Elec. Technol. , Guilin, Guangxi 541004, P. R. China Guangxi Key Lab. of Automotive Parts and Vehicle Technol. , Guangxi Univ. of Sci. and Technol. , Liuzhou, Guangxi 545006, P. R. China Guangxi Key Lab. of Wireless Broadband Commun. and Signal Processing, Guilin Univ. of El.ec. Technol. , C, uilin, Guangxi 541004, P. R. China)

机构地区:[1]桂林电子科技大学信息与通信学院,广西桂林541004 [2]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004 [3]广西科技大学广西汽车零部件与整车技术重点实验室,广西柳州545006 [4]桂林电子科技大学广西无线宽带通信与信号处理重点实验室,广西桂林541004

出  处:《微电子学》2016年第6期736-739,745,共5页Microelectronics

基  金:广西自然科学基金资助项目(2013GXNSFAA019335);桂林电子科技大学研究生教育创新计划资助项目(2016YJCX74);广西汽车零部件与整车技术重点实验室开放课题(2014KFMS04);广西无线带宽通信与信号处理重点实验室(GXKL061505)

摘  要:在传统带隙基准源的基础上,设计了一种在极宽温度范围内具有高温度稳定性的CMOS带隙基准电路。该电路将三极管的集电极置于负反馈环路中,以避免三极管基极分流对集电极电位的影响,实现温度补偿。通过采用低电源抑制比(PSRR)的差分运放,可以得到不受电源电压影响的基准电压。基于0.5μm CMOS标准工艺实现,采用Spectre进行仿真,结果表明:该带隙基准源在室温下产生的基准电压为(1.256 9±0.000 32)V,在-35℃~125℃温度范围内的温漂系数为1.39×10^(-6)/℃;当工作电压为1.8~4.6V时,输出电压仅变化0.31mV/V;3V供电下的功耗为14.69μW;满足胎压监测芯片的设计要求。Based on the traditional bandgap reference source,a CMOS bandgap reference circuit with high temperature stability over a wide temperature range had been designed.The collector potential of the transistor was placed in the negative feedback loop,which could effectively avoid the influence of the base of the transistor on the collector potential,and the temperature compensation was realized.By using a low PSRR differential amplifier,the circuit could have a reference voltage and be free from the effect of power voltage.Based on a 0.5μm standard CMOS process,the circuit was simulated with Spectre.The results showed that the circuit had an output voltage of(1.256 9±0.000 32)V,and a temperature coefficient of 1.39×10-6/℃ at a temperature range of-35 ℃~125℃.When the power supply voltage was 1.8~4.6V,the variation rate of the output voltage was 0.31mV/V.The consumption of the circuit was 14.69μW at 3Vsupply,which met the requirements of TPMS applications.

关 键 词:带隙基准源 宽温度范围 高温度稳定性 负反馈 胎压监测 

分 类 号:TN432[电子电信—微电子学与固体电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象