一种新型片上全差分电感的设计  

Design of a Novel Fully Differential On-Chip Inductor

作　　者：王德志[1,2] 任志雄[1] 顾期斌[3] WANG Dezhi REN Zhixiong GU Qibin(Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, P. R. China Hubei Key Laboratory of Ferro ＆ Piezoelectric Materials and Devices, Wuhan 430062, P. R. China Faculty of Materials and Architectural Engineering, Hubei University of Education, Wuhan 430205, P. R. China)

机构地区：[1]湖北大学物理与电子科学学院,武汉430062 [2]铁电压电材料与器件湖北省重点实验室,武汉430062 [3]湖北第二师范学院建筑与材料工程系,武汉430205

出　　处：《微电子学》2016年第6期818-821,共4页Microelectronics

基　　金：湖北省自然科学基金资助项目(2013CFB014);武汉市应用基础研究计划资助项目(2014010101010006)

摘　　要：提出了一种新型的片上全差分电感结构。电感采用全对称的几何形状,消除了传统差分电感因跳线引起的失配,提高了差分电感的性能。基于TSMC 0.18μm RF CMOS工艺,对设计的全差分电感进行流片与测量,结果表明,差分电感两端口之间的失配量比传统差分电感下降了28%。A novel topology of fully differential on-chip inductor was presented.With symmetrical geometry,the proposed differential inductor could eliminate the mismatches of two input ports,which was an intrinsic problem caused by cross-over lines in the traditional differential inductors.So the inductor＇s performance was improved.Based on the measurement results of some taped-out differential inductors with TSMC 0.18μm RF CMOS process,the mismatches of the proposed structure＇s two input ports had been reduced by 28%,compared with the traditional differential counterparts.

关 键 词：片上电感 差分 无源器件 

分 类 号：TN432[电子电信—微电子学与固体电子学]