GaAs平面掺杂势垒二极管  

Ga As Planar Doped Barrier Diode

作　　者：张宇[1] 车相辉[1] 于浩[1] 宁吉丰[1] 杨中月[1] 杨实[1] 陈宏泰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2017年第1期27-31,共5页Semiconductor Technology

摘　　要：二极管是定向检波器的重要组件,提高定向检波器的检波灵敏度,需要降低二极管的开启电压。而平面掺杂势垒(PDB)二极管具有极低的势垒高度,适合制作定向检波器。设计了GaAs平面掺杂势垒二极管的材料结构,并采用金属有机化合物气相淀积(MOCVD)方法对其进行外延生长。对PDB二极管的物理模型进行了理论分析。通过模拟计算和实验分析了本征层厚度和p层的面电荷密度对PDB二极管I-V特性的影响。通过实验设计优化了材料结构参数,测试了其I-V特性,使PDB二极管的开启电压降低到了0.06 V,将此样品应用到定向检波器中测得检波灵敏度为20~25 mV/mW。Diode is an important component of the directional detector,and it is necessary to reduce the turn-on voltage of diodes for improving the detection sensitivity. Planar doped barrier（ PDB）diode has a very low barrier height,which is suitable for making the directional detector. Material structure of the Ga As PDB diode was designed,and then the structure was grown by the metal organic chemical vapor deposition（ MOCVD） method. Physical model of the PDB diode was analyzed theoretically.The effects of the undoped layer thickness and the surface charge density of the p layer on the I-V characteristics of PDB diodes were analyzed by simulation and experiments. Through optimizing the material structure parameters and testing the I-V characteristics,the forward turn-on voltage of the PDB diode is reduced to 0. 06 V. Detection sensitivity is measured for 20 m V / m W to 25 m V / m W when the sample is applied to the directional detector.

关 键 词：平面掺杂势垒(PDB)二极管 金属有机化合物气相淀积(MOCVD) 开启电压 I-V特性 定向检波器 检波灵敏度 

分 类 号：TN315.3[电子电信—物理电子学]