Al掺杂半导体Mg_2Si薄膜的制备及电学性质  

Preparation and Electrical Properties of Al Doped Semiconductor Mg_2Si Thin Films

作　　者：王善兰 廖杨芳[1,2] 房迪[1] 吴宏仙 肖清泉[1] 袁正兵[1] 谢泉[1] 

机构地区：[1]贵州大学大数据与信息工程学院新型光电子材料与技术研究所,贵阳550025 [2]贵州师范大学物理与电子科学学院,贵阳550001

出　　处：《半导体技术》2017年第1期50-54,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61264004);贵州省自然科学基金资助项目(20142052;20132209);贵州省科技攻关计划资助项目(20113015);贵州省国际科技合作资助项目(20127004;20137003);贵州省教育厅"125"重大科技专项资助项目(2012003);贵州省青年英才培养工程资助项目(2012152);贵州省科技厅贵州大学联合基金资助项目(20147610);贵阳市科技计划资助项目(20121012-16);贵州大学研究生创新基金资助项目(2016068);安顺学院航空电子电气与信息网络贵州省高校工程技术研究中心开放基金资助项目(HKDZ201403)

摘　　要：采用磁控溅射方法和热处理工艺在Si衬底上制备了不同Al质量分数的Mg_2Si薄膜,研究了不同Al质量分数对Mg_2Si薄膜结构及其电学性质的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和四探针测试仪对Al掺杂Mg_2Si薄膜的晶体结构、表面形貌和电学性质进行表征和分析。结果表明:采用磁控溅射技术在Si衬底上成功制备了不同Al质量分数的Mg_2Si薄膜,样品表面表现出良好的连续性,在Mg_2Si(220)面具有择优生长性。随着质量分数的增加,结晶度先增加后降低,晶粒尺寸减小,且在Al质量分数为1.58%时结晶度最好。此外,样品电阻率也随着Al质量分数的增加逐渐降低,表明Al掺杂后的Mg_2Si薄膜具有更好的导电性,这对采用Mg_2Si薄膜研制半导体器件有着重要的意义。The Mg_2Si thin films doped with different Al mass fractions were prepared on the Si substrates by magnetron sputtering method and heat processing technology. The effects of different Al mass fractions on the structure and electrical properties of the Mg_2Si thin films were studied. The crystal structure,surface topography and electrical property of the Mg_2Si thin films with different Al mass fractions were characterized and analyzed by X-ray diffractometer（ XRD）,scanning electron microscope（ SEM）and four-point probe. The results show that the Mg_2Si thin films with different Al mass fractions are successfully prepared by magnetron sputtering technique on the Si substrate,and the surface of the sample shows good continuity. It is found that the Mg_2Si film has only one preferred orientation of Mg_2Si（ 220）.With the increase of mass fractions,the crystallinity increases first and then decreases,and the grain size is reduced. The crystallinity is the best with 1. 58% Al mass fractions. The resistivity of the samplealso decreases with the increase of Al mass fractions,indicating that Al doped Mg_2Si thin films have better electrical conductivity,which is significant to the development of semiconductor devices using Mg_2Si thin films.

关 键 词：磁控溅射法 AL掺杂 Mg2Si薄膜 电阻率 晶体结构 

分 类 号：TN304.055[电子电信—物理电子学]