半导体材料辐射效应的表征与分析  

Characterization and Analysis of Radiation Effects of Semiconductor Materials

作　　者：曾光[1] 刘许强[1] 杨娜[1] 杨桂霞[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《半导体技术》2017年第1期61-68,共8页Semiconductor Technology

基　　金：中国工程物理研究院核物理与化学研究所科技创新基金资助项目(2015CX03)

摘　　要：在辐射环境中,电子系统常用的半导体器件及电路会出现不同程度的性能退化,甚至发生失效。其根本原因来源于辐射致组成半导体器件的材料内部缺陷的产生和积累。表征和分析辐射致材料内部缺陷的种类、浓度、分布等信息,是半导体材料辐射效应研究的重要内容。从辐射致缺陷微观形貌、结构特征,及其引起的宏观电效应三方面,归纳总结了几种重要的半导体材料辐射效应的表征和分析方法,分析了每种方法的优缺点及适用范围,并指出半导体材料辐射效应表征与分析技术发展的方向,可为电子器件、半导体材料辐射效应领域的研究人员提供参考。Semiconductor devices and circuits,which are the basic components of electronic systems,usually exhibit performance degradation to various degrees or even failure in radiation environment.The primary cause is the formation and accumulation of radiation induced defects in materials that constitute semiconductor devices. Characterizing and analyzing the properties of radiation induced defects in materials,such as types,concentration and distribution,are significant contents of the research on the radiation effects of semiconductor materials. Several important characterization and analysis methods for radiation effects of semiconductor materials are summarized in the aspects of micro morphologies,structures as well as macro electrical effects of radiation induced defects. The advantages,disadvantages and applicable scopes of each method are discussed. The future development direction of characterization and analysis techniques for radiation effects of semiconductor materials is also pointed out,which provides a reference for researchers in the field of radiation effects of electronic devices and / or semiconductor materials.

关 键 词：半导体材料 辐射效应 表征 缺陷 宏观电效应 

分 类 号：TN304.07[电子电信—物理电子学]