射频电容静电放电响应研究  

Research to the Response of RF Capacitor under ESD

作　　者：邓世雄[1] 付丽欣[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《军械工程学院学报》2016年第6期24-28,共5页Journal of Ordnance Engineering College

基　　金：国家自然科学基金项目(60971042)

摘　　要：为了准确掌握射频电容在人体模型静电放电作用下的输出特性和抗静电能力,对不同材料和容值的射频电容进行人体模型静电放电注入试验.试验结果表明:小容值电容对静电具有衰减作用,但当电容发生击穿时,阻隔作用显著下降;介质材料和厚度不同的电容抗静电能力存在较大差别.该研究结果对微波混合集成电路设计时电容的选型以及电路设计具有一定的工程指导意义.In order to accurately know the output characteristics and anti-electrostatic abilities of RF capacitors under the condition of human body model（HBM）electrostatic discharge,the HBM ESD injection test was undertaken using several kinds of RF capacitors with different values and materials.The test results indicate the following：The small value capacitor can attenuate the ESD pulse,but the effect is reduced remarkably when the capacitor is broken down.The anti-electrostatic abilities of RF capacitors vary greatly with differences in the thickness and material type.The research results would have certain guiding significance in engineering to the application of RF capacitor and microwave hybrid integrated circuit design.

关 键 词：射频 电容 静电放电 击穿 混合集成电路 

分 类 号：TN722.16[电子电信—电路与系统] TN433