a-Si∶H/a-SiC∶H多层薄膜的光、电特性研究  

The optical and electrical properties of a-Si∶H/a-SiC∶H multilayer films

作　　者：蒋冰[1] 丁宁[1] 陈乙豪[1] 马蕾[1] 

机构地区：[1]河北大学电子信息工程学院,河北保定071002

出　　处：《功能材料》2016年第10期10153-10156,共4页Journal of Functional Materials

基　　金：国家自然科学基金青年科学基金资助项目(61204079);河北省自然科学基金资助项目(F2013201196)

摘　　要：采用射频等离子体增强化学气相沉积(PECVD)技术,以SiH_4、CH_4和H_2为反应气体,在单晶硅和石英衬底上制备a-Si∶H/a-SiC∶H多层薄膜。利用透射电子显微镜(TEM)对样品的微结构进行了表征,同时对其电子输运性质和光吸收特性进行了实验研究。结果表明,本实验条件下制备的多层薄膜样品为非晶态多层薄膜结构,并且样品具有良好的周期性结构和陡峭的界面特性。室温条件下,样品在垂直方向上呈现出多势垒顺序共振隧穿特性。由于量子限制效应,当a-Si∶H势阱层厚度<8nm,随着势阱层厚度减小,样品的光学带隙增大,光吸收系数减小。The a-Si∶H/a-SiC∶H multilayer film was prepared on the monocrystalline silicon and quartz sub-strates by radio frequency plasma enhanced chemical vapor deposition technique（RF-PECVD）,using SiH4 ,CH4 and H2 as reaction gas sources.The microstructures of a-Si∶H/a-SiC∶H samples characterized represented u-sing transmission electron microscope（TEM）.At the same time,the electrical transport and optical absorption properties of a-Si∶H/a-SiC∶H multilayer films were experimental studied.The results show that the multilay-er film samples were amorphous multilayer film with good periodic structure and steep interfaces.At room tem-perature,sequential resonant tunneling peculiarities on the vertical direction of multilayer film samples were ob-served.When well layer thickness of a-Si∶H is smaller than 8 nm,the optical band increase and optical absorp-tion coefficient decrease with the decreasing of well layer thickness,which results from quantum size confine-ment effect.

关 键 词：PECVD 多层薄膜 微结构特征 电子输运性质 光吸收特性 

分 类 号：O484.1[理学—固体物理]