银铜双原子MACE法制备多晶硅陷光结构及其性能的研究  

Fabrication and property of anti-reflection structures on multicrystalline silicon by Ag and Cu dually assisted chemical etching

作　　者：郑超凡[1] 沈鸿烈[1,2] 蒲天[1,2,3] 蒋晔[1] 李玉芳[1] 唐群涛 吴斯泰 陈洁仪[1] 金磊[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏省能量转换材料与技术重点实验室,南京210016 [2]南京航空航天大学纳米智能材料器件教育部重点实验室,南京210016 [3]江苏辉伦太阳能科技有限公司,南京210061

出　　处：《功能材料》2017年第1期1230-1235,共6页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61176062);江苏省前瞻性联合创新资助项目(BY2013003-08);研究生创新基地(实验室)开放基金资助项目(KFJJ20160605)

摘　　要：采用一步银铜双原子金属辅助化学腐蚀(MACE)法,于室温下在多晶硅表面制备纳米陷光结构,研究了腐蚀时间及银铜摩尔比对多晶硅表面反射率和形貌的影响。用分光光度计测量了多晶硅表面的反射率,用扫描电镜观察了表面形貌。发现银铜双原子MACE法所形成的结构比银单原子或铜单原子MACE法所形成的结构更加平整且具有更低的表面反射率室温下经过银铜两种金属原子协同催化腐蚀后,在银铜原子摩尔比低于1/10时多晶硅表面形成了纳米多孔状与槽状结构共存的复合结构,在银铜原子摩尔比高于1/5时多晶硅表面形成密集的纳米线结构。研究结果表明,孔状与槽状的复合结构具有良好的陷光效果,当银铜原子摩尔比为1/10,腐蚀时间为180s时,多晶硅的反射率达到最低,仅为6.23%。A novel one-step metal assisted chemical etching （MACE） method with Ag and Cu dual elements as catalysts at room temperature was introduced to prepare anti-reflection structures on multicrystalline silicon （mc-Si）. The effects of etching time and molar ratio of Ag/Cu on the reflectance and surface morphology of mcSi wafer were systematically studied. The reflectance was analyzed by spectrophotometer and the morphologies were observed by scanning electron microscopy. It was found that mc-Si surface by Ag/Cu-assisted etching is smoother than that by Ag or Cu-assisted etching and the reflectance of the former is lower. A complex structure with pores and grooves was obtained when Ag/Cu molar ratio is smaller than 1/10 and dense nanowire structure was obtained when Ag/Cu molar ratio is larger than 1/5. The results showed that the complex structure with pores and grooves possessed a good light trapping effect. A minimum surface reflectance of 6.23% in the wavelength range from 400 to 900 nm was obtained when Ag/Cu molar ratio was 1/10 and etching time was 180 s.

关 键 词：黑硅 减反射 纳米结构 金属辅助化学法 银铜双原子 

分 类 号：O431[机械工程—光学工程]