GaN HEMT高效功率放大器电路温度特性研究  

Temperature Dependence on DC and RF Performance of GaN Two-stage Switching Mode Power Amplifier

作　　者：王祯祥[1] 傅海鹏[1] 邬海峰[1] 闫冬[1] Wang Zhenxiang Fu Haipeng Wu Haifeng Yan Dong(School of Electronic Information Engineering, Tianjin University, Tianjin 300072, Chin)

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《南开大学学报（自然科学版）》2016年第6期58-62,共5页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：国家重大科技专项(2012ZX03004008)

摘　　要：研究了GaN HEMT开关功率放大器的交流电流和微波性能随温度的变化.研究结果表明,GaN HEMT的高温退化将导致开关功放工作电流及小信号增益(S_(21))随温度升高逐渐下降,其中GaN HEMT的电压与电容特性的温度变化和膝点电压的高温退化将影响开关功放输出阻抗匹配.在120℃时,开关功放大信号状态下的交流电流退化更明显;同时由于高温退化所导致的阻抗失配,功放的S_(21)增益和输出功率会进一步下降.The temperature dependence of the ac current and the microwave performance of the GaN HEMT switching mode power amplifier（PA） has been researched in this paper.The results of our research indicate,the operating current and the small signal gain（S21） of switching mode PA decrease with the rise of temperature gradually due to the temperature degradation of the GaN HEMT,in addition,the change of voltage-capacitance characteristic with the temperature and the temperature degradation of the knee voltage of GaN HEMT have impacts on the output impedance matching of switching mode PA.When the temperature is up to 120℃,the AC current of the PA degrades more seriously under the large signal condition.Meanwhile,the high temperature degradation also results in impedance mismatching of the PA and a decrease of S21 and output power.

关 键 词：氮化镓 高电子迁移率晶体管 功率放大器 温度特性 

分 类 号：TN47[电子电信—微电子学与固体电子学]