频率对半导体器件热击穿影响的理论模型  

Theoretical model of influence of frequency on thermal breakdown in semiconductor device

作　　者：张存波[1] 闫涛[1] 杨志强[1] 任伟涛[1] 朱占平[1] Zhang Cun-Bo Yan Tao Yang Zhi-Qiang Ren Wei-Tao Zhu Zhan-Ping(Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi＇an 710024, China)

机构地区：[1]西北核技术研究所,高功率微波技术重点实验室,西安710024

出　　处：《物理学报》2017年第1期334-339,共6页Acta Physica Sinica

摘　　要：针对半导体器件中的热击穿,通过分析已有的理论模型,把频率对器件热区热产生和热传导的影响引入理论模型.利用格林函数求解热传输方程,同时对余误差函数进行近似处理,求解得到热区温度以及器件烧毁功率与频率和脉冲宽度的表达式.通过数值分析,求解得到不同频率下器件烧毁功率随脉冲宽度的变化规律以及不同脉冲宽度下器件烧毁功率随频率的变化规律,同时给出了频率对器件烧毁功率影响的物理解释.In order to analyze the influence of frequency on thermal breakdown in semiconductor device, the influences of frequency on heat generation and heat conduction in the hot zone are introduced into the theoretical model. The heat transfer equation is solved by the Green＇s function method, and the error function is approximated. Then, the expressions of temperature in the hot zone and failure power of semiconductor device including frequency and pulse width are derived.The change rules of failure power with the increasing of pulse width under different frequencies and with the increasing of frequency under different pulse widths are obtained. The result shows that the expression for center temperature in hot zone caused by the failure power is divided into four time regions, i.e., regions Ⅰ- Ⅳ, by three thermal diffusion times ta, tb, and tc. The three diffusion times ta, tb, and tcare related to the side lengths a, b and c（c≦b≦a） of the hot zone represented by a rectangular parallelepiped, respectively. In region Ⅰ（0≦t≦ tc）, the relation between failure power P-f and failure time t is Pf ∝ t（-1）. In this region, the failure time is short and little heat is lost from the surface of hot zone so that the adiabatic term（t（-1）） dominates. In region Ⅱ（tc 〈t 〉tb）, the relation between failure power Pf and failure time t is Pf∝ t（-1/2）. In this region, it is indicative of heat loss from the hot zone to its surrounding medium. In region Ⅲ（tb≦t ≦ta）, the relation between failure power Pf and failure time t is Pf ∝（-1）/ ln t. In region Ⅳ（t〉ta）,the failure power Pfis constant. In this region, the failure time is very large and thermal equilibrium can be established so that the steady state term dominates. The relation between failure power and frequency is divided into two parts. In part one, the failure power increases with the increasing of frequency; in part two, the failure power is nearly constant with the increasing of frequency. Meanwhile, the

关 键 词：热击穿 频率 脉冲宽度 理论分析 

分 类 号：TN303[电子电信—物理电子学]