高效GaAs基系Ⅲ-Ⅴ族化合物太阳电池的研究进展  

Research Progress of High Efficiency GaAs-Based Ⅲ-Ⅴ Compound Solar Cells

作　　者：高慧[1,2] 杨瑞霞[1] Gao Hui Yang Ruixia(School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China The 18th Research Institute, CETC, Tianjin 300384, China)

机构地区：[1]河北工业大学电子信息工程学院,天津300401 [2]中国电子科技集团公司第十八研究所,天津300384

出　　处：《半导体技术》2017年第2期81-90,共10页Semiconductor Technology

基　　金：河北省自然科学基金资助项目(2014202184);河北省研究生创新资助项目(220056)

摘　　要：GaAs基系Ⅲ-V族化合物太阳电池具有带隙最优、抗辐射能力强、高效率、高温稳定性好和机械强度高等优点,是目前高效太阳电池的研发重点。从异质结设计、多结结构设计、晶格匹配优化、光谱-能带匹配设计、掺N半导体材料及半导体键合工艺等方面,介绍了Ⅲ-V族高效多结太阳电池近年来的研究进展和关键技术,重点讨论了光谱匹配结构设计和半导体键合等新技术方法。采用半导体键合技术的四结聚光太阳电池最高效率已达46%。同时结合目前的技术现状,对其未来发展进行了展望。The GaAs-based III-V compound solar cell has the advantages of the optimal band gap,high radiation resistance,high efficiency,good high temperature stability and good mechanical strength,so it is the focus of the research and development of high efficiency solar cells. The research progress and key technologies of III-V compound multi-junction solar cells with high efficiency in recent years are introduced,mainly on the heterojunction design,the multi-junction structure design,the optimization of the lattice matching,the spectrum-band gap matching design,the N-doped semiconductor materials and the semiconductor bonding technology. The new technologies,such as the structure design of the spectral matching and the bonding of semiconductor are discussed emphatically. The maximum efficiency of fourjunction concentrator solar cells using the semiconductor bonding technology reaches 46%. At the same time,it makes a prospect of the future development of the technology combined with the current technological situation.

关 键 词：GAAS太阳电池 GAINNAS 反向失配 正向失配 半导体键合 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN304.23[电子电信—物理电子学]