基于反向平行二极管对管的高性能W波段谐波混频器（英文）  

A High-Performance W-Band Subharmonic Mixer Based on Anti-Parallel Diode Pair

作　　者：闵文超 孙浩[1] 张祁莲 佟瑞[1] 钱蓉[1] 孙晓玮[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国科学院大学,北京100049

出　　处：《电子器件》2016年第6期1283-1286,共4页Chinese Journal of Electron Devices

基　　金：上海市科委基础研究重大重点项目(14JC1407500)

摘　　要：采用砷化镓反向平行二极管对管,提出了一款W波段高性能谐波混频器。二极管对管是由实验室砷化镓工艺线制作而成,并且二极管对管的模型显示具有极高的截止频率和低的串联电阻特性,所以适用于W波段。基于此二极管对管,设计、制作并测试了石英衬底上的W波段谐波混频器。结果显示在80 GHz^100 GHz的频率范围内,谐波混频器的变频损耗为9.2 d B^12 d B,并且所需要的本振功率仅为6 d Bm,能够很好地减少对本振源的需求。A high-performance W-band subharmonic mixer utilizing GaAs anti-parallel diode pair（APDP）is presented. The APDP is fabricated by GaAs process platform of our laboratory,and the model of APDP shows ultra-high cut-off frequency and low series resistance,which is suitable for W-band mixers. Based on the APDP,a W-band subharmonic mixer on quartz substrate was designed,fabricated and measured. The results show that the conversion loss of the subharmonic mixer is 9.2 dB^12 dB from 80 GHz to 100 GHz,and the required local oscillator （LO）power is just 6 dBm,which can significantly reduce the requirement for LO source.

关 键 词：谐波混频器 W波段 肖特基二极管 低本振功率 

分 类 号：TN454[电子电信—微电子学与固体电子学]