串联压接型IGBT阀体高电位自取能静态均压的试验研究  

Experimental Research on Static Voltage Balance of the High Potential of Self Energy Under Stak Pak IGBTs Series Valve

作　　者：任西周 李卫国 黄杰 周舟 王光波[2] REN Xizhou LI Weiguo HUANG Jie ZHOU Zhou WANG Guangbo(Global Energy Interconnection Reseach Institute, Changping District, Beijing 102209, China School of Electrical and Electronics Engineering, North China Electric Power University, Changping District, Beijing 102206, China)

机构地区：[1]全球能源互联网研究院,北京市昌平区102209 [2]华北电力大学电气与电子工程学院,北京市昌平区102206

出　　处：《智能电网》2017年第1期28-32,共5页Smart Grid

摘　　要：目前,主流可关断器件IGBT分为模块型IGBT和压接型IGBT,与之对应电力电子装置分为基于模块型IGBT多电平主电路拓扑和基于压接型IGBT串联型两电平拓扑。由于基于压接型IGBT的串联型电压源换流器具有诸多优点,因此,压接型IGBT将成为未来电网柔性直流输电、灵活交流输电、定制电力和新能源并网等领域的核心器件。压接型IGBT应用的最核心技术是驱动保护技术,而实现驱动保护技术的前提条件是驱动电路如何获取供电能量。因为压接型IGBT串联应用的主要优势领域为高压柔性直流输电,所以只有高位自取能方式是可行的。由于压接型IGBT端电压波动非常大,而门级驱动保护单元对供电要求非常高,因此高电位自取能技术是驱动保护功能实现的前提条件。首先提出在各串联压接型IGBT上独立实现高电位自取能功能方案,其次在不同的参数及工况下进行充分的实验,并依据典型的实验波形进行相应的理论分析,最后通过实验与理论分析得出DC-DC取能电源的启动电压、启动时间与取能电容的容值是串联IGBT阀端电压不均衡的影响因素,并为串联IGBT驱动保护电路如何实现稳定的供电提供理论基础。Presently the main stream IGBT package includes HIPAK and STAKPAK. The circuit of power electronic device mainly includes multilevel topology module based on HIPAK and two-level inverter topology module based on STAKPAK IGBT according to IGBT package types. Because two-level voltage source converter based on STAKPAK IGBT in series connection has many advantages, STAKPAK IGBT will be core component on DC transmission, FACTS, custom power and new energy integration in future power grid. Although the key point of STAKPAK IGBT application is driver and protection control technology, a precondition to realize the drive protection technology is how to obtain power energy. Only the high potential self energy is feasible because the main advantage of STAKPAK IGBT series-connection is most utilized in high voltage flexible DC transmission application field. Since voltage fluctuation of IGBT valve is considerable and the gate driver requirements for power supply quality is very high, the high potential self energy technology is crucial. In this paper, firstly, scheme of high potential self energy is proposed. Secondly, the corresponding theoretical analysis is carried out under full experimental parameters and different conditions. Lastly, it is concluded that the influence factors of the IGBT valve voltage unbalance are start voltage, start delay of DC-DC power and self energy capacitance value, providing theoretical basis for IGBT driver to obtain power energy.

关 键 词：压接式IGBT IGBT串联 高位自取能 电压静态平衡 

分 类 号：TM46[电气工程—电器]