氮化镓材料的研究进展  

The Research Progress of Gallium Nitride Materials

作　　者：牛双蛟[1] 李倩 

机构地区：[1]江门市职业病防治所监测评价科,广东江门529020 [2]利比投资咨询有限公司重庆分公司,重庆400000

出　　处：《广东化工》2017年第2期84-86,共3页Guangdong Chemical Industry

摘　　要：GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在发光二极管、激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。介绍了GaN基半导体材料的特性、制备方法及在光电子和微电子器件领域的应用,并讨论了今后的发展趋势。GaN have the characteristics of wide bandgap, high thermal conductivity, large electron saturation shift velocity and dielectric constant. They have wide applications in fields such as light emitting diodes, laser diodes, high performance UV detectors and high temperature, high frequency, large power semiconductor devices. The paper introduces the performance and preparation methods of GaN semiconductor materials and their applications in optoelectronics and rnicroelectronics fields, followed by discussed the development trend in the future.

关 键 词：氮化镓 半导体 制备方法 应用 

分 类 号：TN304[电子电信—物理电子学]