基于GaN的宽带功率放大器的仿真  

Simulation of Wideband Power Amplifier based on GaN

作　　者：吴治霖[1] 周伟中[1] WU Zhi-lin ZHOU Wei-zhong(No. 30 Institute of CETC, Chengdu Siehuan 610041, China)

机构地区：[1]中国电子科技集团公司第三十研究所,四川成都610041

出　　处：《通信技术》2017年第1期171-175,共5页Communications Technology

摘　　要：在现代无线通信系统中,系统对功率放大器的功率输出、效率、工作带宽等技术指标的要求愈来愈高。因此,宽带功率放大器的研究变得十分有意义。新一代半导体材料GaN,较Si、Ga As等材料,具有禁带宽、击穿场强高、热稳定性优异等特性,在宽带功率放大器的设计中被广泛使用。因此,基于Ployfet公司的GX3442,利用Microwaveoffice软件,仿真了一款0.2~1.6 GHz的末级宽带功率放大器,其输出功率大于49 dBm,效率可达55%。In modern wireless communication system, the system has even higher reguirement for the output power, efficiency and working bandwidth of the power amplifier. Thus the study on broadband power amplifier becomes very important. GaN, as the new-generation semiconductor material, has much wider forbidden bandwidth, higher breakdown voltage, more excellent thermal stability than Si and Ga As, and thus is widely used in the broadband power amplifier design. Based on GX3442 from Ployfet and with Microwave office, simulation on a broadband PA is done, this PA could work at 0.2 GHz to 1.6 GHz, with output power of more than 49 dBm and maximum efficiency of 55%.

关 键 词：宽带功率放大器 GAN MICROWAVE OFFICE 高效率 

分 类 号：TN722.75[电子电信—电路与系统]