图形化蓝宝石衬底上有序微米半球形SnO_2的生长、结构和光学特性研究  

Growth,structural and optical properties of orderly SnO_2 microhemispheres on patterned sapphire substrates

作　　者：冯秋菊[1] 潘德柱 邢研[1] 石笑驰 杨毓琪 李芳[1] 李彤彤[1] 郭慧颖[1] 梁红伟[2] Feng Qiu-Ju Pan De-Zhu Xing Yan Shi Xiao-Chi Yang Yu-Qi Li Fang Li Tong-Tong Guo Hui-Ying Liang Hong-Wei(School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China)

机构地区：[1]辽宁师范大学物理与电子技术学院,大连116029 [2]大连理工大学物理与光电工程学院,大连116024

出　　处：《物理学报》2017年第3期323-328,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11405017;61574026);辽宁省自然科学基金(批准号:201602453;2014020004)资助的课题~~

摘　　要：利用化学气相沉积法,在图形化蓝宝石衬底上,无需引入催化剂,通过改变反应源锡粉量生长出了不同尺寸、规则排列的有序微米半球形SnO_2.测试结果表明,微米半球形SnO_2呈选择性生长特性,并且随着反应源锡粉量的增加,微米半球的直径逐渐增大,结晶质量变差.此外,随着锡粉量的增加,在吸收谱中还观测到了吸收边的红移现象.这种选用图形化衬底的制备方法为制备高密度、有序排列的SnO_2微/纳米结构提供了一种可行和有效的方法.One-dimensional nanoscaled materials, such as nanotubes, nanowires and nanobelts, have attracted a great deal of attention in recent years because of their unique electronic, optical, and mechanical properties. Their potential applications are found in next generation devices, functional materials, and sensors. A material of particular interest is stannic oxide（SnO_2）, which is a novel oxide semiconductor material for ultraviolet and blue luminescence devices due to its wide band gap of 3.6 eV at room temperature. SnO_2 can also be widely used in many fields, such as gas sensors,optoelectronic devices, and transparent conductive glass, because of its high optical transparency in the visible range,low resistivity, and higher chemical and physical stability. In recent years, one-dimensional nanostructures of SnO_2 materials, such as nanobelts, nanotubes, and nanowires, have been reported. However, the preparations of orderly SnO_2 micro/nanostructures have been rarely reported. In this paper, orderly SnO_2 microhemispheres with different sizes are grown on patterned sapphire substrates by a traditional chemical vapor deposition method without using any catalyst.The patterned sapphire substrates are cleaned by using a standard sapphire wafer cleaning procedure. High-purity metallic Sn powders（99.99%） and oxygen gas are used as Sn and oxygen sources, respectively. The flow rate of highpurity Ar carrier gas is controlled at 200 sccm, and the oxygen reactant gas with a flow rate of 100 sccm is introduced into the system. In the growth process, the whole system is kept at 1000℃ for 30 min. The surface morphologies, structural and optical properties of the SnO_2 microhemispheres are investigated by the field emission scanning electron microscope（HITACHI S4800）, the X-ray diffraction with a Cu Kαradiation（0.15418 nm）, the optical absorption spectroscope（UV-3600 UV-VIS-NIR, Shimadzu）, and the photoluminescence spectroscope with an excitation source of He-Cd laser（λ = 325 nm） to identify the As r

关 键 词：化学气相沉积 图形化衬底 SNO2 微米半球 

分 类 号：TN304.21[电子电信—物理电子学]