基于碳化硅功率器件的光伏逆变电路设计  

A Design of PV Inverter Circuit Based on SiC Power Device

作　　者：谢芳娟[1] 谭菊华[1] 彭岚峰[1] XIE Fangjuan TAN Juhua PENG Lanfeng(College of Science and Technology, Nanchang University, Nanchang 330029, Jiangxi, Chin)

机构地区：[1]南昌大学科学技术学院,江西南昌330029

出　　处：《电网与清洁能源》2016年第12期120-125,共6页Power System and Clean Energy

基　　金：2015年度江西省教育科学技术研究项目(GJJ151497)~~

摘　　要：文中基于对碳化硅(SiC)功率MOSFET器件的理论研究,设计了用于大功率光伏逆变的ZVT PWM Boost逆变器电路。针对基本的逆变器电路结构并结合ROHM公司的SiC功率器件特性,优化了电路中的其他元器件参数。针对逆变器主电路结构以及实际光伏逆变过程中的需求,确定了驱动芯片选型和电路模块的拓扑结构。最后文中使用Or CAD Capture CIS软件对逆变器的主电路和控制驱动电路模块进行模拟仿真,验证了逆变器的功能。所设计的逆变器仿真结果表明,其效率为98.15%,与Si基的IGBT电路相比在效率方面提高了3.15%。This paper presents a ZVT PWM Boost inverter circuit designed for high power photovoltaic inverter based on the theoretical study of the SiC power MOSFET device. The other element parameters in the circuit are optimized for the basic inverter circuit structure in combination with the SiC power device characteristics of ROHM Corp. The type of driver chips and the topological structure of circuit modules are determined according to the main circuit structure and the requirements in the actual photovoltaic inverter processes.Finally,the main circuits and the control and driver circuit modules of the inverter are simulated by using Or CAD Capture CIS, and functions of the inverter have been verified. The simulation results indicate that the efficiency of the designed inverter can reach 98.15%,improved by 3.15% compared to the Si based IGBT circuits.

关 键 词：ZVT PWM Boost逆变器 SI C 驱动电路 

分 类 号：TN615[电子电信—电路与系统]