声呐发射机中D类功率放大器的设计  

Design of class D power amplifier in sonar transmitter

作　　者：车贺宾 江鹏[2] CHE Hebin JIANG Pengz(School of Information Science and Technology, Shijiazhuang Tiedao University, Shijiazhuang 050043, China Wuhan University, Whuhan 430072, China)

机构地区：[1]石家庄铁道大学信息科学院技术学院,河北石家庄050043 [2]武汉大学,湖北武汉430072

出　　处：《电声技术》2017年第2期23-27,共5页Audio Engineering

基　　金：中科院声学所背衬材料吸声性能和结构参数测试平台制备项目(250000171)

摘　　要：声呐发射机的主要作用是产生具有特定形式的大功率电信号,经过匹配网络(提高发射机输出效率)后再通过换能器将电信号转换为声信号。发射机一般包括信号产生器、功率放大器和发射换能器。详细介绍了一种基于MOSFET的半桥式D类功率放大器设计的步骤和方法,并给出了水声换能器假负载的实验波形,信号畸变与失真较小。根据测试结果证明输出50 k Hz左右PWM波时效率达到80%,符合声呐发射机高效率、小体积的设计要求。The sonar transmitter is used mainly to produce high power electrical signal and convert it into sound signal through the matching network （increase the transmitter output efficiency） and the piezoelectric transducer. The transmitter mainly composes of signal generator, power amplifier and the transducer. The design method of half bridge class D amplifier based on MOSFET is introduced in detail, besides the waveform of transducer fictitious load is given and it is slightly distorted. The test result proves the efficiency of the amplifier reaches 80% at 50 kHz. It meets the design requirements of high efficiency and small volume of the sonar transmitter.

关 键 词：声呐发射机 半桥电路 MOSFET(金静氧化物半导体场效应晶体管) 

分 类 号：TN722.7[电子电信—电路与系统]