Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature  

作　　者：朱科 YANG Ye LI Jia SONG Weijie 

机构地区：[1]Department of Physics and Mathematics, Hunan Institute of Technology [2]Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2017年第1期85-88,共4页武汉理工大学学报（材料科学英文版）

基　　金：Funded by National Natural Science Foundation of China(NSFC)(Nos.21205127,61275114)

摘　　要：Al-doped zinc oxide（AZO） and Ga-doped zinc oxide（GZO） thin films with the same doping concentration（3.6 at%） were deposited on glass substrates at room temperature by direct current（DC） magnetron sputtering.Consequently,we comparatively studied the doped thin films on the basis of their structural,morphological,electrical,and optical properties for optoelectronic applications.Both thin films exhibited excellent optical properties with more than 85%transmission in the visible range.The GZO thin film had better crystallinity and smoother surface morphology than the AZO thin film.The conductivity of the GZO thin film was improved compared to that of the AZO thin film：the resistivity decreased from 1.01×10^-3 to 3.5×10^-4 Ω cm,which was mostly due to the increase of the carrier concentration from 6.5×10^20 to 1.46×10^21cm^-3.These results revealed that the GZO thin film had higher quality than the AZO thin film with the same doping concentration for optoelectronic applications.Al-doped zinc oxide（AZO） and Ga-doped zinc oxide（GZO） thin films with the same doping concentration（3.6 at%） were deposited on glass substrates at room temperature by direct current（DC） magnetron sputtering.Consequently,we comparatively studied the doped thin films on the basis of their structural,morphological,electrical,and optical properties for optoelectronic applications.Both thin films exhibited excellent optical properties with more than 85%transmission in the visible range.The GZO thin film had better crystallinity and smoother surface morphology than the AZO thin film.The conductivity of the GZO thin film was improved compared to that of the AZO thin film：the resistivity decreased from 1.01×10^-3 to 3.5×10^-4 Ω cm,which was mostly due to the increase of the carrier concentration from 6.5×10^20 to 1.46×10^21cm^-3.These results revealed that the GZO thin film had higher quality than the AZO thin film with the same doping concentration for optoelectronic applications.

关 键 词：room temperature ZnO thin films SPUTTERING electrical properties 

分 类 号：TN304.21[电子电信—物理电子学] TB383.2[一般工业技术—材料科学与工程]