Effects of the Annealing Heating Rate on Sputtered Aluminum Oxide Films  

Effects of the Annealing Heating Rate on Sputtered Aluminum Oxide Films

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作  者:唐秀凤 

机构地区:[1]School of Applied Physics and Materials,Wuyi University,Jiangmen 529020,China [2]State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China

出  处:《Journal of Wuhan University of Technology(Materials Science)》2017年第1期94-99,共6页武汉理工大学学报(材料科学英文版)

摘  要:AlxOy films by DC reactive magnetron sputtering were annealed in air ambient at 500 ℃for 1 h with different heating rates of 5,15,and 25 ℃/min.Then heat treatments at 900 ℃ were carried out on these 500 ℃-annealed films to simulate the high-temperature application environment.Effects of the annealing heating rate on structure and properties of both 500 ℃-annealed and 900 ℃-heated films were investigated systematically.It was found that distinct γ-Al2O3 crystallization was observed in the 900 ℃-heated films only when the annealing heating rates are 15 and 25 ℃/min.The 500 ℃-annealed film possessed the most compact surface morphology in the case of 25 ℃/min.The highest microhardness of both 500 ℃-annealed and 900℃-heated films were obtained when the annealing heating rate was 15 ℃/min.AlxOy films by DC reactive magnetron sputtering were annealed in air ambient at 500 ℃for 1 h with different heating rates of 5,15,and 25 ℃/min.Then heat treatments at 900 ℃ were carried out on these 500 ℃-annealed films to simulate the high-temperature application environment.Effects of the annealing heating rate on structure and properties of both 500 ℃-annealed and 900 ℃-heated films were investigated systematically.It was found that distinct γ-Al2O3 crystallization was observed in the 900 ℃-heated films only when the annealing heating rates are 15 and 25 ℃/min.The 500 ℃-annealed film possessed the most compact surface morphology in the case of 25 ℃/min.The highest microhardness of both 500 ℃-annealed and 900℃-heated films were obtained when the annealing heating rate was 15 ℃/min.

关 键 词:aluminum oxide film SPUTTERING annealing heating rate MICROSTRUCTURE 

分 类 号:TQ133.1[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]

 

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