绝缘修饰层及其厚度对喷墨打印OTFT的影响  

The impact of dielectric modification layer and its thickness on the performance of inkjet-printed OTFT

作　　者：张国成[1,2] 林金阳[1] 

机构地区：[1]福建工程学院信息科学与工程学院,福建福州350118 [2]福州大学平板显示技术国家地方联合工程实验室,福建福州350102

出　　处：《福建工程学院学报》2016年第6期597-602,共6页Journal of Fujian University of Technology

基　　金：福建省自然科学基金资助项目(2016J01749;2015J05117);福建省教育厅资助项目(JA15350)

摘　　要：通过在底栅顶接触的喷墨打印有机薄膜晶体管的Si O2表面采用原子层沉积方式制备薄层的Al2O3修饰层,并与未修饰前进行比较,发现有源层在ALD-Al2O3修饰后的Si O2表面接触角大大变小,且喷墨打印的有源层线条变粗。而随着ALD-Al2O3修饰层厚度的增加,Si O2表面粗糙度变大。通过测试其电学性能,发现ALD-Al2O3修饰层厚度为1 nm时,OTFT的性能最好,与未修饰前相比,其迁移率提高了近8倍,而开关比提高约4个数量级。The SiO2 surface of bottom-gate top-contact configuration inkjet-printed organic thin film transistor（OTFT） was modified by preparing Al2O3 modification layer with ALD depositing on the dielectric layer. The contact angle of the active layer post ALD-Al2O3 modification decreased,while the width of the profiles of the inkjet printing active layers increased. With the increase of the thickness of ALD-Al2O3,the roughness of the dielectric layers increased. When the thickness of ALDAl2O3 was 1nm,the performance of OTFT reached the best,with the mobility increasing 8 times and the on/off current ratio increasing 4 orders of magnitude.

关 键 词：有机薄膜晶体管 原子层沉积 喷墨打印 表面修饰 修饰层厚度 

分 类 号：TN321.5[电子电信—物理电子学]