HgCdTe器件中pn结结区扩展的表征方法  

Characterization method of PN junction region expansion in HgCdTe device

作　　者：翁彬[1,2] 周松敏[1] 王溪[1,3] 陈奕宇[1,3] 李浩[1,3] 林春[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]上海科技大学,上海201210 [3]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2017年第1期54-59,共6页Journal of Infrared and Millimeter Waves

基　　金：中国科学院国防科技创新基金项目(国防实验基金)~~

摘　　要：报道了液氮温度下激光束诱导电流(LBIC)和I-V测试两种在HgCdTe器件中pn结结区扩展的表征方法.通过LBIC和I-V测试,发现了p型HgCdTe材料中由B+离子注入成结和干法刻蚀成结对材料造成的损伤使得有效结区范围大于注入和刻蚀面积,并获得n区横向扩展.同时,通过对比,相互印证两种方法得到的测试结果一致.The laser beam induced current （LBIC） and the Ⅰ-Ⅴ test at liquid-nitrogen temperature were applied to characterize the PN junction region extension effect in the HgCdTe device processing. By LBIC and Ⅰ-Ⅴ test, it was found that the area of n-type region of p-type HgCdTe material implanted by Boron ion or etched by ion beam milling is larger than the nominal values. The transverse dimension of n-type region was measured. At the same time, it was found that the results obtained by both methods were comparable.

关 键 词：HGCDTE 激光束诱导电流 Ⅰ-Ⅴ测试 B+离子注入 干法刻蚀 

分 类 号：TN3[电子电信—物理电子学]