基于薄膜电阻的波导E-T结功率分配/合成器  

Power divider/combiner of waveguide E-T junction based on thin film resistor

作　　者：王斌[1] 田兵[1] 汪春霆[1] 

机构地区：[1]中国电子科技集团公司第54研究所,河北石家庄050081

出　　处：《红外与毫米波学报》2017年第1期114-119,共6页Journal of Infrared and Millimeter Waves

基　　金：国家高技术研究发展计划(863计划)(2015AA015701)~~

摘　　要：单个器件输出功率不满足系统要求时,功率合成技术是提高系统输出功率的有效方法.本文详细研究了基于薄膜电阻的波导E-T结功率分配/合成器,最终设计了一种新型的基于薄膜电阻的波导E-T结.该结构具有高隔离度、低插入损耗、小体积、宽频带等优点.通过合理设计薄膜电阻的长宽比,尽量增大薄膜电阻的面积,并且采用高导热的氮化铝陶瓷基板作为微带和薄膜电阻的介质基板,提高了基于薄膜电阻的波导E-T结承受的功率.利用三维电磁场仿真软件HFSS对其进行了建模仿真,加工的实物经过测试在25~34 GHz插入损耗小于0.2 d B,回波损耗优于-15 d B,隔离度优于10 d B.经对比,实测结果与仿真结果吻合,具有较好的工程应用价值.Power combining technology is an effective method to improve the output power of a system when the output power of a single amplifier does not meet the requirement of the system. In this paper, a new type of waveguide E-T junction power divider/combiner based on thin film resistor was studied in detail, and a novel waveguide E-T junction based on thin film resistor was designed. The structure has the advantages of high isolation, low insert loss, small size, and wide band. In order to increase the power which the waveguide E-T junction based on thin film resistor can bear, we try to increase the area of the thin film resistor by designing the length to width ratio of the thin film resistor reasonably, and use the aluminum nitride substrate with high thermal conductivity as the dielectric substrate of the microstrip and thin film resistor. The novel waveguide E-T junction based on thin film resistor was sim- ulated in 3D electromagnetic simulation software HFSS. After testing, the insert loss was less than 0.2 dB, the return loss was better than -15 dB, the isolation was better than 10dB in 25 - 34 GHz. The measured results were consistent with the simulated results, and the structure has a good engineering application value.

关 键 词：KA频段 功率分配/合成器 波导E-T结 薄膜电阻 

分 类 号：TN73[电子电信—电路与系统]