Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy  

作　　者：Alexander Berg Philippe Caroff Naeem Shahid Mark N. Lockrey Xiaoming Yuan Magnus T. Borgstrom Hark Hoe Tan Chennupati Jagadish 

机构地区：[1]Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00, Lund, Sweden [2]Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia [3]Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia

出　　处：《Nano Research》2017年第2期672-682,共11页纳米研究（英文版）

摘　　要：Ternary III-V nanowires （NWs） cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross- section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.Ternary III-V nanowires （NWs） cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross- section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.

关 键 词：NANOWIRE INGAP selective-area epitaxy CATHODOLUMINESCENCE energy-dispersive X-ray spectroscopy 

分 类 号：O[理学]