硅量子点在光电器件中的应用研究进展  

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

作　　者：谭华[1] 倪朕伊 皮孝东[1] 杨德仁[1] 

机构地区：[1]浙江大学材料科学与工程学院硅材料国家重点实验室,浙江杭州310027

出　　处：《激光与光电子学进展》2017年第3期42-61,共20页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61222404);国家973计划(2013CB632101)

摘　　要：硅量子点(Si QDs)的尺寸一般小于10nm,由于量子限域效应和表面效应而表现出与体硅材料不同的电子和光学性质,因此硅量子点受到了研究者的关注。近年来,硅量子点因其新颖的光电性能已经被应用到光电器件领域,并取得了一系列的研究进展。概述了硅量子点的电子和光学性质,详细介绍了国内外有关硅量子点在发光器件、太阳电池和光探测器3个方面的研究进展,并针对不同类型的硅量子点光电器件的性能进行了分析,认为经过坚持不懈的研究,硅量子点能够在未来光电器件革新中扮演重要角色。Silicon quantum clots （Si QDs） are usually smaller than 10 nm. They have drawn much attention from researchers because of their novel electronic and optical properties caused by quantum confinement effect and surface effect, which are different from those of bulk silicon materials. In recent years, Si QDs have been applied in the field of optoelectronics because of their novel electronic and optical properties, and a series of research progress have been achieved. The electronic and optical properties of Si QDs are overviewed. The use of Si QDs in optoelectronic devices such as light-emitting diodes, solar cells and photodetectors is introduced in detail. The performance of different types of Si QDs in optoelectronic devices is analyzed as well. It is believed that if continuous efforts in the research on Si QDs are made, Si QDs will play a crucial role in the innovation of optoelectronic devices in the future.

关 键 词：光电子学 硅量子点 光电器件 发光二极管 太阳电池 光探测器 

分 类 号：TN29[电子电信—物理电子学]