一种高g值压阻式加速度传感器  

A High-g Piezoresistive Accelerometer

作　　者：肖咸盛[1] 卞玉民[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2017年第4期261-267,284,共8页Micronanoelectronic Technology

摘　　要：基于压阻效应,利用微电子机械系统(MEMS)技术,研制了一种可用于多领域的高g值加速度传感器。加速度传感器采用四端全固支八梁结构,利用力学计算、ANSYS仿真和工艺约束相结合的方法确定了结构参数。通过对压敏电阻的数量、结构和布放位置的分析与设计,进一步减小了加速度传感器的横向灵敏度。采用硅-硅键合与共晶键合相结合工艺制作了圆片级气密封装的加速度传感器芯片,并用塑封工艺实现了加速度传感器芯片的封装,易于批量生产和工业应用。最后,对加速度传感器的性能进行了测试,结果表明灵敏度为1.5~2μV/g,一阶固有频率大于200 kHz,在1.5×10~5 g量程内正常并有效工作,抗过载大于2.5×10~5 g。Based on the piezoresistive effect and micro-electro-mechanical system（MEMS）technology,a high-gpiezoresistive accelerometer used in many fields was researched.A four-terminal fixed eight-beam structure was adopted in the accelerometer.The structure parameters of the accelerometer were obtained through the mechanical calculation,ANSYS simulation and process constraint.The transverse sensitivity of the accelerometer is further reduced by the analysis and design of the number,structure and layout of the piezoresistances.The accelerometer chips with the wafer-level hermetic packaging were fabricated by using a combined technology of Si-Si bonding and eutectic bonding,and the accelerometer dies were packaged by the plastic package process for batch production and industrial applications.Finally,the performances of the accelerometer were tested.The results show that the sensitivity is 1.5-2μV/g and the first order inherent frequency is larger than 200 kHz.The accelerometer can work well in the measure range of 1.5×10~5 g,and withstand the overload attack over 2.5×10~5 g.

关 键 词：高g 压阻效应 加速度传感器 微电子机械系统(MEMS) 圆片级封装 

分 类 号：TH824.4[机械工程—仪器科学与技术] TH703[机械工程—精密仪器及机械]