精确测定In_xGa_(1-x)N晶体薄膜中铟含量的卢瑟福背散射法研究  

Accurated Rutherford backscattering measurement for determination of indium content in In_xGa_(1-x)N epitaxial crystal film

作　　者：王雪蓉[1] 刘运传[1] 孟祥艳[1] 周燕萍[1] 王康[1] 王倩倩[1] 

机构地区：[1]中国兵器工业集团第五三研究所,山东济南250031

出　　处：《中国测试》2017年第3期15-18,57,共5页China Measurement & Test

基　　金：国防基础科研项目(J092009A001)

摘　　要：采用金属有机化合物气相淀积法(MOCVD)在蓝宝石上生长InxGa1-xN/Ga N晶体薄膜,Ga N缓冲层的厚度为2.5μm,InxGa1-xN晶体薄膜的厚度大约800 nm,通过光致发光光谱仪测量样品发光峰的峰值,确定铟镓氮晶体薄膜中铟分布的均匀性,取样品均匀性良好的铟镓氮晶片进行卢瑟福背散射实验,每个实验室测量6个样品,两个实验室共同完成,对数据进行分多层精确拟合分析,获得外延层中的xIn,xIn值由多层拟合结果的加权平均值和定值不确定度组成。研究结果表明:采用入射离子4He,能量为2 000 ke V,散射角为165°时,铟镓氮晶片中铟含量(x=20.46%)的相对测量不确定度为2.47%,包含因子k=2。The InxGal-xN/GaN crystal film was grown on vapor deposition. The thickness of GaN buffer layer is sapphire substrate by metal organic chemical 2.5 μm, and the InxGal-xN epitaxial layer is about 800 nm. The composition of InxGal-xN film was determined by Rutherford backscattering spectroscopy （RBS） between two Ion beam laboratories and every laboratory measured six samples. The random spectrum datum were simulated by multilayer fitting, the results consists of the weighted average of multilayer fitting results and measurement uncertainty, when the alpha particle was used as incidence ion with 2000keV energy and the scattering angle was 165°, the research results show the measurement uncertainty of RBS for the determination of InxGal-xN（x=20.46%） is 2.47%, the coveraze factor k=2.

关 键 词：氮铟镓 金属有机化合物气相淀积法 卢瑟福背散射 测量不确定度 

分 类 号：TN248.4[电子电信—物理电子学]