直拉硅单晶生长过程建模与控制研究综述  

A review of growth process modeling and control of Czochralski silicon single crystal

作　　者：刘丁[1] 赵小国[1] 赵跃[1] 

机构地区：[1]西安理工大学晶体生长设备及系统集成国家地方联合工程研究中心,陕西西安710048

出　　处：《控制理论与应用》2017年第1期1-12,共12页Control Theory & Applications

基　　金：国家自然科学基金重点项目(61533014);国家重点基础研究发展计划("973"计划)(2014CB360508);陕西省科技统筹创新工程计划(2016KTZDGY–03–03)资助~~

摘　　要：硅单晶是最重要的半导体材料,90%的半导体器件和集成电路芯片都制作在硅单晶上.随着集成电路技术的快速发展,对硅单晶的品质要求也不断提高.直拉法是生产硅单晶的主要方法,其科学原理与方法、生长技术与工艺、控制策略与手段一直是理论界和产业界高度关注和不断研究的热点.本文针对直拉法电子级硅单晶生长过程,以晶体生长基本原理为基础,从生长建模、变量检测、控制方法等方面进行了全面的阐述,特别针对当今大尺寸、高品质硅单晶生长的要求,总结了目前所取得的主要研究成果与面临的问题,并提出了相应的研究思路和方法.Silicon single crystal is one of the most important materials of semiconductor. More than 90% of semiconductor devices and integrated circuit chips are made of silicon single crystal. As the rapid development of integrated circuit technique, the quality of silicon single crystal is being concerned much more than before. Czochralski method is the main method of silicon single crystal production, therefore, its scientific principle and method, growth technique and technology, as well as control strategy and method have always been a hot research topic in both academia and industry. For growth process of electronic-grade silicon single crystal by Czochralski method, based on basic principle of crystal growth,this paper fully describes growth modeling, variables detection, control method, and so on. Especially for the demand of silicon single crystal with large size and high quality nowadays, the main research achievements and current problems are summarized. The research ideas and methods are put forward correspondingly.

关 键 词：直拉硅单晶 过程建模 变量检测 过程控制 控制策略 

分 类 号：TN304.12[电子电信—物理电子学] TP273[自动化与计算机技术—检测技术与自动化装置]