成像级CdSe中红外波片的表面处理工艺研究  

Study on Surface Treatment of the Imaging CdSe Mid-infrared Waveplate

作　　者：杨辉[1] 张志勇[2,3] 冯志伟[2] 熊祝韵 曾体贤[1,3] 

机构地区：[1]西华师范大学物理与空间科学学院,四川南充637002 [2]中国科学院国家天文台,北京100012 [3]中国科学院太阳活动重点实验室(国家天文台),北京100012

出　　处：《影像科学与光化学》2017年第2期168-173,共6页Imaging Science and Photochemistry

基　　金：中科院太阳活动重点实验室开放课题(KLSA201514);国家自然科学基金项目(11273034;11673038);国家重大科研仪器研制项目(部门推荐)(11427901)资助

摘　　要：本文利用改进的垂直无籽晶气相升华法生长出尺寸达Φ30×40 mm的优质硒化镉(CdSe)单晶体。解理晶体,通过X射线衍射仪测试精确的获得(001)晶面。然后定向切割、研磨、抛光,获得了尺寸为20×20×3mm^3的CdSe中红外波片初胚。以弱碱性溶液与刚玉粉的混合液作为抛光液,利用化学机械抛光法对CdSe中红外波片进行表面抛光处理。结果显示,抛光处理有效的减少了波片表面的损伤层、划痕及结构缺陷,晶片表面的粗糙度降低,在2~20μm波段透过率较高(达到70%),满足中红外波片的应用需求。In this paper,apiece of CdSe single crystal with a size ofΦ30×40 mm^3 has been grown by the modified vertical unseeded vapor sublimation method.The accurate（001）face was obtained by X-ray diffraction test after crystal was cleavaged.A CdSe infrared waveplate with size of 20×20×3 mm^3 was got by cuting,grinding and polishing.Then the surface of CdSe infrared waveplate was polished by chemical mechanical polishing method in liquid maxed alkaline solution and polishing liquid.The results show that polishing treatment can effectively reduce the scratch,defects and surface roughness of structure layer,and the infrared transmittance of the plate in the range of 2-20μm is high（up to 70%）,which can satisfy the processing requirements of infrared waveplate.

关 键 词：硒化镉晶体 中红外波片 化学机械抛光 

分 类 号：TN304.25[电子电信—物理电子学]