高开关频率SiC逆变器的控制程序执行时间优化  

Optimization of Control Program Execution Time for SiC Drivers With High Switching Frequency

作　　者：何国林[1,2] 国敬[1,3] 范涛[1,4] 温旭辉[1,3] 

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院大学,北京100190 [3]中国科学院电力电子和电气驱动重点实验室,北京100190 [4]北京市电动车辆协同创新中心,北京100081

出　　处：《微电机》2017年第3期27-31,共5页Micromotors

基　　金：科技部新能源汽车试点专项"高温车用SiC器件及系统的基础理论与评测方法研究"(2016YFB0100600)

摘　　要：本文的背景项目是研制一台基于SiC MOSFET的高功率密度电动汽车用驱动逆变器。为实现高功率密度的目标,需充分发挥SiC器件高频、高速和高效的优异性能,但随之而来的是对逆变器其他组件带来的更高性能要求。以主控代码为例,当SiC器件的开关频率提升到50 k Hz时,现有代码的执行时间已不能满足要求,成为制约控制频率上升的主要因素。要想发挥SiC器件的潜在优势,就要求在不减少原有功能的基础上,优化程序代码。本文以50k Hz的控制频率为目标,综合使用函数转移到RAM中执行,函数重构,程序的交错执行等方法对基于TI的TMS320F28335的硬件平台的C语言控制程序进行优化,使得程序的总执行时间从基准代码的34.2μs减小到13.6μs,为基于SiC MOSFET的高功率密度变频器的研制做好软件上的准备。The background of this paper is to develop a drive inverter based on SiC MOSFET for high power density electric vehicle. To achieve the goal of high power density, SiC devices need to give full play to high-frequency, high-speed and high performance, which demand higher performance of other components of the inverter. For example, when the SiC device switching frequency to 50 kHz, the existing code execution time has been unable to meet the requirements. To exploit the potential advantages of SiC devices, it is necessary to optimize the code without reducing the original function. In this paper, to achieve the goal of 50 kHz control frequency, the following methods will be applied： function transfer to the RAM, function reconstruction, and the program interleaved execution based on TI＇s TMS320F28335 hardware platform. The total execution time reduced from 34. 2 us to 13.6 us, so the software requirement of SiC MOSFET high-power density converter is met.

关 键 词：DSP TMS320F28335 SIC MSOFET 代码执行时间优化 

分 类 号：TM464[电气工程—电器]