一种应用于SiC BJT脉冲放电的快速驱动电路  

A fast drive circuit for SiC BJT in application of pulse discharging

作　　者：肖剑波[1] 邓林峰[1] 张渊[1] 黄海清[1] 王俊[1] 沈征[1] 

机构地区：[1]湖南大学电气与信息工程学院,长沙410082

出　　处：《中国科技论文》2017年第2期214-219,共6页China Sciencepaper

基　　金：湖南省自然科学基金资助项目(2015JJ3043);高等学校博士学科点专项科研基金资助项目(20120161120012);国家自然科学基金资助项目(61404048;51577054)

摘　　要：提出了1种应用于SiC BJT脉冲放电的快速驱动电路,采用电容储能的思想设计了SiC BJT驱动电路和脉冲放电电路。脉冲放电时,整个电路与电网间由高阻隔离;采用达林顿结构实现了充电电路;驱动电路基于硅MOSFET和硅BJT 2级电路,对光耦电流进行快速功率放大。实验结果表明,SiC BJT在脉冲放电时,基极电流从0过渡到器件导通所需电流的上升时间约为6ns。所提出的驱动电路设计思想对高压双极型功率半导体器件的快速驱动开发具有启发意义。A fast driver for SiC BJT which was used in pulse discharging was introduced.The drive circuit and discharging circuit were designed,utilizing the capacitors for energy storage.High impedance separation between pulse power circuit and civil power grid was realized in the process of discharging.Darlington structure was applied in the charging circuit.The current in the optical coupler was amplified in the driver by means of Si MOSFET and Si BJT cascode modules.The experimental results indicated that it took around 6ns for base current of SiC BJT to rise from 0to the value which was needed for conduction.The concept of this driver design is enlightening for developing driver of high-voltage bipolar semiconductor devices.

关 键 词：SIC BJT 驱动电路 脉冲功率技术 

分 类 号：TN322.8[电子电信—物理电子学]