DUV辅助高压退火对a-IGZO薄膜微结构及光学特性的影响  

Effects of DUV-assisted High Pressure Annealing on Microstructure and Optical Properties of a-IGZO Thin Films

作　　者：邹春晖[1] 张婷[1] 汤猛[1] 钟传杰[1] 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122

出　　处：《固体电子学研究与进展》2016年第2期165-170,共6页Research & Progress of SSE

基　　金：国家自然基金资助项目(60776056)

摘　　要：利用原子力显微镜和椭圆偏振光谱仪,研究了不同退火温度下深紫外(DUV)辅助高压处理对溶液旋涂法制备的非晶IGZO薄膜微观结构与光学特性的影响。实验结果表明,通过DUV辅助高压退火处理,当退火温度从210℃升高至300℃,薄膜的光学带隙由2.97eV升至3.32eV,而膜表面粗糙层从22.81nm降至5.02nm。300℃-DUV处理的样品与同等压强下300℃无UV处理和350℃退火处理的相比,薄膜的折射率增加并明显地降低了其表面粗糙度,因此,DUV辅助高压退火处理能够有效减少有机化合物的残留,促进了成膜前驱基团的迁移,并形成更加致密的非晶IGZO薄膜。Effects of deep-ultraviolet(DUV)assisted high pressure at different annealing temperatures on microstructural and optical properties of the a-IGZO films fabricated by solution process were investigated by atomic force microscope and spectroscopic ellipsometry.The results showed that when the annealing temperature was increased from 210℃to 300℃,the optical band gap of the film was increased from 2.97 eV to 3.32 eV,but the surface roughness was decreased from 22.81 nm to 5.02 nm with the DUV-assisted high pressure.Compared to other post-treatment conditions,such as treatment without UV irradiation at 300℃ under the same pressure or treatment with high annealing temperature at 350℃,the refractive index of the DUV treated film at 300℃ was increased and the surface roughness was decreased obviously.Therefore,DUV-assisted high pressure treatment could effectively minimize organic chemical residues and promote the migration of film-forming pioneer group,as well as form more dense a-IGZO film.

关 键 词：非晶IGZO薄膜 溶液法 深紫外 椭圆偏振光谱 

分 类 号：TN321.5[电子电信—物理电子学]