1.2~1.4GHz 600W硅LDMOS微波功率晶体管研制  

Development of 1.2~1.4GHz 600W Silicon LDMOS Microwave Power Transistor

作　　者：应贤炜[1] 王建浩[1] 王佃利[1] 刘洪军[1] 严德圣[1] 顾晓春[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2016年第3期207-212,共6页Research & Progress of SSE

摘　　要：针对雷达、通信、遥控遥测等领域对LDMOS大功率器件的迫切需求,基于南京电子器件研究所LDMOS技术平台,优化了版图布局、芯片结构,开发了50VL波段600 W硅LDMOS。该器件耐压大于115V,在50V工作电压、1.2~1.4GHz工作频率、300μs脉宽,10%占空比及15 W输入功率的工作条件下,输出功率大于630 W,增益大于16.3dB,漏极效率大于53.1%。所研制的芯片已进入相关工程应用。Aiming at the urgent need of LDMOS power device for radar,communication,remote control and telemetry,a 50 V L-band 600 W Si LDMOS has been developed based on LDMOS technology platform of Nanjing Electronic Devices Institute(NEDI).Under the condition of 50 Vsupply voltage,1.2~1.4GHz operating frequency,300μs pulse width and 10% duty cycle,the proposed transistor with more than 115 Vbreakdown voltage has output power over630 W,power gain more than 16.3dB and drain efficiency higher than 53.1%.The designed chips have been used in some projects.

关 键 词：硅横向扩散金属-氧化物-半导体 L波段 微波功率晶体管 

分 类 号：TN385[电子电信—物理电子学]