高度边带陡峭的半集总LTCC滤波器设计  

Design of Bandpass Filter with Highly Steep Band-edge Based on Semi-lumped Structure

作　　者：刘毅[1] 戴永胜[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《固体电子学研究与进展》2016年第3期222-224 233,共4页Research & Progress of SSE

基　　金：国家重点基础研究发展"973"计划资助项目(2009CB320201);国家国防重点实验室基金资助项目(9140C1402021102)

摘　　要：基于LTCC技术设计一款高度边带陡峭的带通滤波器。为了便于生产加工,选用半集总结构,采用LTCC技术保证了此款带通滤波器的小型化。通过交叉耦合插入零点的方式提高边带陡峭度,为了满足高度边带陡峭的特性要求,选择上下层模式,级联两个一致的带通滤波器。电路仿真与电磁场三维仿真结果均优于设计指标。此款带通滤波器中心频率在1 237.5MHz,带宽575MHz,100~480MHz频率上的衰减均优于40dB,1 900~3 050 MHz频率上的衰减均优于30dB,尺寸仅为4.5mm×3.2mm×2.5mm。A bandpass filter with highly steep band-edge based on LTCC technology was presented.Semi-lumped structure was chosen to simplify the production process,and LTCC technology to miniaturize the bandpass filter.Better steep band-edge was realized by cross coupling to add transmission zero.In addition,two identical bandpass filters were cascaded upper and lower to realize highly steep band-edge.The result of circuit simulation and electromagnetic 3Dsimulation is better than the designed specification.The center frequency of the bandpass filter is 1 237.5 MHz,the bandwidth is 575 MHz,the stop-band attenuation is better than 40 dB from 100 MHz to 480 MHz and 30 dB from 1 900 MHz to 3 050 MHz,and the size is only 4.5 mm×3.2mm×2.5mm.

关 键 词：带通滤波器 高度边带陡峭 低温共烧陶瓷 半集总结构 上下结构 

分 类 号：TN713.5[电子电信—电路与系统]