一种低压高速灵敏放大器电路的设计  

Design of a Low-voltage High-speed Sense Amplifier Circuit

作　　者：杨光军 

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《固体电子学研究与进展》2016年第3期240-244,共5页Research & Progress of SSE

基　　金：2016年度上海市青年科技启明星计划资助项目(16QB1401200)

摘　　要：提出了一种适合于低电源电压嵌入式闪存系统的高速的灵敏放大器电路。讨论了应用在这个灵敏放大器电路中的自箝位预充技术及自定时锁存技术。提出的灵敏放大器电路在0.11μm的嵌入式闪存平台上实现。测试结果表明:本文提出的灵敏放大器电路在1V的电源电压下达到6.4ns的访问时间。A high-speed sense amplifier circuit applicable to embedded flash systems with low supply voltage was proposed.Novel self-clamping pre-charge technology and self-timed latching technology were adopted to increase access speed under low power supply.The circuit was implemented in a 0.11μm CMOS compatible embedded flash system.Testing results show that the sense amplifier reaches 6.4ns access time under 1Vpower supply voltage.

关 键 词：灵敏放大器电路 嵌入式闪存 低电源电压 

分 类 号：TN722[电子电信—电路与系统]