Ge_2Sb_2Te_5相变存储单元瞬态结晶过程研究  

Study on the Nucleation in Phase Change Memory Cell Based on Ge_2Sb_2Te_5

作　　者：王玉菡[1] 康杰虎[2] 王玉婵[3] 徐霞[1] 

机构地区：[1]重庆理工大学电子信息与自动化学院,重庆400054 [2]重庆交通大学机电与车辆工程学院,重庆400074 [3]重庆邮电大学光电工程学院,重庆400065

出　　处：《固体电子学研究与进展》2016年第3期253-256,共4页Research & Progress of SSE

基　　金：重庆理工大学青年科研项目星火支持计划项目(2014XH10);重庆邮电大学博士启动基金(A2015-38)

摘　　要：研究了基于Ge2Sb2Te5的相变存储器单元的瞬态结晶过程,并通过高频示波器捕捉了瞬态结晶过程的电压波形,发现了在结晶过程中瞬态波形存在振荡现象,且振荡频率随时间和脉高变化具有一定规律。结晶完成后振荡现象消失,单元电阻转变为稳定的低阻,通过相变存储器的场致导电通道结晶模型很好地解释了该瞬态结晶现象。The transient nucleation in phase change memory(PCM)cell based on Ge2Sb2Te5 was studied,and the transient waveform of the nucleation was captured and recorded by the highfrequency oscilloscope.It was found that there were some oscillations in transient waveform,and the oscillation frequency was proved to be proportional to the current pulse amplitude.The oscillations disappeared after the nucleation with the cell resistance changing into low resistance state,which could be well explained by the field induced nucleation model.

关 键 词：Ge2Sb2Te5 相变存储器 结晶 振荡 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]